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PLX Technology, Inc.
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| Part No. |
PEX8524-BB25VBI PEX8524-BB25VBIG
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| OCR Text |
...pies of the pci-to-pci bridges secondary bus-number and subordinate bus-number registers in the switch. cam content addressable memory. c...side of the nt port, connects to extern al device pins. the secondary side of the nt port is referr... |
| Description |
PCI BUS CONTROLLER, PBGA680 35 X 35 MM, 2.23 MM HEIGHT, 1 MM PITCH, BGA-680
PCI BUS CONTROLLER, PBGA680 35 X 35 MM, 2.23 MM HEIGHT, 1 MM PITCH, GREEN, BGA-680
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| File Size |
4,770.89K /
542 Page |
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...ure 1. diameter and primary and secondary flat dimension standard specifications diameter the linear dimension across the surface of a wafer...side surface of the wafer. cracks must exceed 0.010? in length under high intensity illumination in ... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
SRM4010
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| OCR Text |
...ule connects to the transformer secondary of a Forward Converter to provide complete high current rectification at output voltages ranging f...side circuitry such as powering opto coupler feedback. In very low voltage applications where the pe... |
| Description |
DC:DC Converter
40A Synchronous Rectifier Module
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| File Size |
222.60K /
11 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STSR2PMCD-TR STSR2P STSR2PCD STSR2PCD-TR STSR2PM STSR2PMCD
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| OCR Text |
... is dedicated to properly drive secondary Synchronous Rectifiers in medium power, low output voltage, high efficiency Forward Converters. Fr...side shoot-through conditions providing proper timing at the outputs turn-off transition. This smart... |
| Description |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER
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| File Size |
287.91K /
12 Page |
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Price and Availability
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