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TOSHIBA
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| Part No. |
TK7S10N1Z
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| OCR Text |
...s features (1) low drain-source on-resistance: r ds(on) = 40 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 100 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. ... |
| Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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| File Size |
239.71K /
9 Page |
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TOSHIBA
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| Part No. |
TK35E08N1
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| OCR Text |
...s features (1) low drain-source on-resistance: r ds(on) = 10.0 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.3 ma) 3. 3. 3. 3.... |
| Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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| File Size |
246.05K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK25A10K3
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| OCR Text |
...ications ? low drain-source on resistance: r ds (on) = 31 m (typ.) ? high forward transfer admittance: |y fs | = 50 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 100 v) ? enhancement-model: v th = 2.0 to 4.0... |
| Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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| File Size |
301.95K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK10A60W5
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| OCR Text |
... ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.35 ? (typ.) by used to super junction structure : dtmos (3) easy to control gate switching (4) enhancement mode: v th = 3 to 4.5 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3.... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
239.38K /
10 Page |
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it Online |
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TOSHIBA
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| Part No. |
SSM6P35FU
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| OCR Text |
...ons ? 1.2-v drive ? low on-resistance : r on = 44 ? (max) (@v gs = -1.2 v) : r on = 22 ? (max) (@v gs = -1.5 v) : r on = 11 ? (max) (@v gs = -2.5 v) : r on = 8 ? (max) (@v gs = -4.0 v) ... |
| Description |
Small-signal MOSFET 2 in 1
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| File Size |
209.04K /
5 Page |
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it Online |
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TOSHIBA
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| Part No. |
SSM6J401TU
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| OCR Text |
...ions ? 4.0v drive ? low on-resistance : r ds(on) = 145m ? (max) (@v gs = ? 4 v) : r ds(on) = 73m ? (max) (@v gs = ? 10 v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain?source voltag... |
| Description |
Small-signal MOSFET
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| File Size |
212.24K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
SSM3K35FS
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| OCR Text |
...ns ? 1.2-v drive ? low on-resistance: r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) absolute maximum ratings ... |
| Description |
Small-signal MOSFET
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| File Size |
200.70K /
5 Page |
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it Online |
Download Datasheet |
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