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  n-ch p-ch Datasheet PDF File

For n-ch p-ch Found Datasheets File :: 20107    Search Time::2ms    
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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...imited by R DS(on) Ta = 25 C n tio ra pe O sh ) ) (T c = 25 C 0 50 100 150 200 Case Temperature Tc (C) ...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T D= 0.03 0.01 10 0....
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ479 2SJ479L 2SJ479S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ479 2SJ479L 2SJ479S
OCR Text ...imited by R DS(on) Ta = 25 C n tio ra pe O (1 ot ) (T c = 25 C ) 0 50 100 150 200 Case Temperature Tc (C...ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu h...
Description Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching

File Size 37.54K  /  7 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...Drain Current - A -100 S( o n) -10 RD t VG (a d ite V) Lim 10 = ID(DC) S Po 10 ipa Pw ID(pulse) = 1 0 10 s 0 s 1 m s ...ch-a)= 83.3 C/W 10 Rth(ch-c)= 1.79 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m ...
Description From old datasheet system
SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ... Single Pulse d -1 -0.1 -1 -10 n) Pw = 10 ID(pulse) s 10 0 s 1 m s ID - Drain Current - A -80 -60 -40 -20 -4 -8 -4 V -100 ...ch-a)= 62.5 C/W 10 Rth(ch-c)= 4.17 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m ...
Description From old datasheet system
SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...on) Date Published January 1998 N CP(K) Printed in Japan (c) 1998 2SJ494 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS D...ch-a) = 62.5 C/W 10 Rth(ch-c) = 3.57 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100...
Description From old datasheet system
SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...n) Date Published November 1997 N Printed in Japan 12.0 0.2 RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -15 A) 15.0 0.3 (c) 199...ch-a) = 62.5C/W 10 Rth(ch-c) = 3.57C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING p-chANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... 0m s( 1s er ho ati (T o t) c= n 25 C ) 0 1 m s s 0 50 100 150 Tc (C) 200 -0.1 -0.2 -5 -10 -20 -50 Case Tempe...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... 20 ra s tio (1 n (T sh c= ot ) 10 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ...PW D =1 C O 0m pe s ra (1 tio s n ho (T t) c= 25 Operation in 0 s 1 m s 20 this area is limited by R DS(on) 0 50 ...ch - c(t) = s (t) * ch - c ch - c = 3.12 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ... R DS(on) ra tio (1 n sh 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -1...ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o...
Description Silicon p-channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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For n-ch p-ch Found Datasheets File :: 20107    Search Time::2ms    
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