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MIMIX[Mimix Broadband]
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| Part No. |
22DSBA0423
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| OCR Text |
...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel... |
| Description |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
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| File Size |
446.34K /
5 Page |
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it Online |
Download Datasheet
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MIMIX[Mimix Broadband]
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| Part No. |
26BAM0545
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| OCR Text |
...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel... |
| Description |
20000 MHz - 38000 MHz RF/MICROWAVE TRIPLE BALANCED MIXER
20.0-38.0 GHz GaAs MMIC Balanced Mixer
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| File Size |
104.71K /
5 Page |
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it Online |
Download Datasheet |
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MIMIX[Mimix Broadband]
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| Part No. |
8OSC0464
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| OCR Text |
...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel... |
| Description |
7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator
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| File Size |
272.82K /
5 Page |
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it Online |
Download Datasheet |
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MIMIX BROADBAND INC
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| Part No. |
CMM-2-BD-000X
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| OCR Text |
...d. a die bonder that utilizes a heated collet and provides scrub bing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximate... |
| Description |
2000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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| File Size |
463.19K /
5 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
BC847BPDXV6T5 BC847BPDXV6T1 BC847BPDXV6
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| OCR Text |
...S
Characteristic (One Junction heated) Total Device Dissipation Derate above 25C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance Junction-t... |
| Description |
General Purpose Dual Transistor
Dual General Purpose Transistor
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| File Size |
95.89K /
8 Page |
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it Online |
Download Datasheet |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
BSP16T1
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| OCR Text |
...vice. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress... |
| Description |
SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
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| File Size |
109.07K /
6 Page |
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it Online |
Download Datasheet |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
BSP62T1
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| OCR Text |
...vice. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress... |
| Description |
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
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| File Size |
178.97K /
6 Page |
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it Online |
Download Datasheet |
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SKYWORKS[Skyworks Solutions Inc.]
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| Part No. |
DSG9500-000
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| OCR Text |
...ghtly against one beam with the heated tip. The substrate can then be appropriately positioned under the tip and the device brought down against the substrate, with proper pressure applied by means of the weld head. A bonding tip temperatur... |
| Description |
Planar Beam Lead PIN Diode
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| File Size |
68.53K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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