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For di dt Found Datasheets File :: 40815    Search Time::1.235ms    
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    IRFPG50 SIHFPG50 SIHFPG50-E3 IRFPG50PBF IRFPG50-205PBF

Vishay Intertechnology, Inc.
Vishay Siliconix
Part No. IRFPG50 SIHFPG50 SIHFPG50-E3 IRFPG50PBF IRFPG50-205PBF
OCR Text ...A (see fig. 12). c. ISD 6.1 A, di/dt 120 A/s, VDD 600, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91254 S-81368-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPG50...
Description 6.1 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC ROHS COMPLIANT, TO-247, 3 PIN
Power MOSFET

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    IRFPG30 SIHFPG30 SIHFPG30-E3 IRFPG30PBF

Vishay Siliconix
Part No. IRFPG30 SIHFPG30 SIHFPG30-E3 IRFPG30PBF
OCR Text ...A (see fig. 12). c. ISD 3.1 A, di/dt 80 A/s, VDD 600, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91252 S-81394-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPG30,...
Description Power MOSFET

File Size 1,698.83K  /  8 Page

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    IRFPE50 SIHFPE50 SIHFPE50-E3 IRFPE50PBF

Vishay Siliconix
Part No. IRFPE50 SIHFPE50 SIHFPE50-E3 IRFPE50PBF
OCR Text ...A (see fig. 12). c. ISD 7.8 A, di/dt 140 A/s, VDD 600 V, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91248 S-81368-Rev. A, 21-Jul-08 www.vishay.com 1 IRFPE...
Description Power MOSFET

File Size 1,554.25K  /  8 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ... = 25C, IF = 62A --- 143 215 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG =...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ... = 25C, IF = 62A --- 143 215 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG =...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...J = 25C, IF = 43A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...J = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 12A, di/dt 14...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...J = 25C, IF = 22A --- 2.2 3.3 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 22A, di/dt 820A/s, VDD V(BR)DSS, TJ 175C VDD = 25V, starting TJ =...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRFP9140 IRFP9140PBF SIHFP9140 SIHFP9140-E3

Vishay Siliconix
Part No. IRFP9140 IRFP9140PBF SIHFP9140 SIHFP9140-E3
OCR Text ... (see fig. 12). c. ISD - 21 A, di/dt 200 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91238 S-Pending-Rev. A, 26-Jun-08 www.vishay.com 1 WORK-...
Description Power MOSFET

File Size 1,445.98K  /  8 Page

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