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  6.0ghz Datasheet PDF File

For 6.0ghz Found Datasheets File :: 993    Search Time::2.422ms    
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RFMD[RF Micro Devices]
RF Micro Devices, Inc.
Part No. NBB-X-K1 NBB-302 NBB-302-E NBB-302-T1
OCR Text ...dB@2GHz * High P1dB of +14.0dBm@6.0ghz and +11.0dBm@14.0GHz Pin 1 Indicator 1 RF OUT 8 Ground 7 6 5 9 4 RF IN 2 3 Ground * Single Power Supply Operation * 50 I/O Matched for High Freq. Use Ordering Information Cascadable Broadband...
Description From old datasheet system
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 级联宽带GaAs MMIC放大器直流到12GHz

File Size 213.73K  /  8 Page

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    MGF1801 MGF1801B 1801B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801 MGF1801B 1801B
OCR Text ...e *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO...0GHz 0.5GHz +j10 +j250 +j100 S21 ,S12 vs. f. +90 S21 S12 0.5GHz 12.0GHz 0 25 12.0GHz...
Description TAPE CARRIER MICROWAVE POWER GaAs FET
From old datasheet system

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RFMD[RF Micro Devices]
RF Micro Devices, Inc.
Part No. NBB-502-T3T NBB-502 NBB-502-E NBB-502-T1
OCR Text ...dB@2GHz * High P1dB of +14.0dBm@6.0ghz * Single Power Supply Operation * 50 I/O Matched for High Freq. Use Pin 1 Indicator 1 RF OUT 8 Ground 7 6 5 9 4 RF IN 2 3 Ground Ordering Information Cascadable Broadband GaAs MMIC Amplifier DC ...
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
OCR Text ...S CONDITIONS VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm) )#6' 5174%' (.#0)' &4#+0 )( (Ta=25deg.C) Ratings -15 -15 22 -61 76 100...0GHz 12 -42 Limits Typ. Max. -5 45 13 7.5 45 -45 1.5 Unit V dBm dB A % dBc deg.C/W Parameter Sat...
Description 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET

File Size 248.84K  /  3 Page

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    HFA3926 HFA3926IA HFA3926IA96 FN4282

INTERSIL[Intersil Corporation]
Part No. HFA3926 HFA3926IA HFA3926IA96 FN4282
OCR Text ...D GND GND GND N/C VG2 1 2 3 4 5 6 7 8 9 28 GND 27 VDD 26 GND 25 RF OUT 24 GND 23 VDD3 22 GND 21 GND 20 GND 19 GND 18 VDD2 17 VG3 16 GND 15 R...0GHz - 2.5GHz 2.5GHz - 2.7GHz VSWR In/Out Input Return Loss Output Return Loss Output Power at P1dB ...
Description From old datasheet system
2.0GHz - 2.7GHz 250mW Power Amplifier

File Size 69.50K  /  7 Page

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    UPG2189TB

NEC
Part No. UPG2189TB
OCR Text ... : 6-pin super mini-mold package 2.0 2.1 0.9 mm application ? high power application for multi-band / multi-...0ghz - 0.30 0.50 db insertion loss2 l ins2 f = 1.0 to 2.0ghz - 0.35 0.55 db insertion loss3 l ins3 f...
Description L-BAND 4W HIGH POWER SPST SWITCH

File Size 1,527.51K  /  8 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC39V4450A_04 MGFC39V4450A MGFC39V4450A04
OCR Text ...Po=28dBm S.C.L. 2MIN (1) 0.6 +/-0.15 12.9 +/-0.2 (2) (2) R-1.6 11.3 2.6 +/-0.2 2MIN (3) 10.7 17.0 +/-0.2 APPLICATIO...0GHz ID Drain current P.A.E. Power added efficiency IM3 3rd order IM distortion *1 Rth(ch-c) Thermal...
Description 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET

File Size 180.23K  /  2 Page

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    HMC165S14

HITTITE[Hittite Microwave Corporation]
Part No. HMC165S14
OCR Text ... 32 24 20 11 22 24 35 42 Max. 0.6 0.8 1.3 Units dB dB dB dB dB dB dB dB dB m dB m SP4T SMT Isolation Return Loss Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF ...
Description GaAS MMIC SP4T SWITCH DC TO 2.0 GHz

File Size 61.29K  /  4 Page

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    MGF1601B 1601B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B 1601B
OCR Text ...ture *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO...0GHz 0.5GHz +j10 +j250 +j100 S21 ,S12 vs. f. +90 S21 S12 0.5GHz 12.0GHz 0 25 12.0GHz...
Description From old datasheet system
MICROWAVE POWER GaAs FET

File Size 25.18K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGF0911A 0911A
OCR Text ... 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) 45 VDS=...0GHz +j10 3.0GHz 3.0GHz S22 0.5GHz 25 50 100 250 +j250 S21 5 4 3 2 0.5GHz 1 0 3.0GHz S12 0 S11...
Description From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET

File Size 21.84K  /  3 Page

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For 6.0ghz Found Datasheets File :: 993    Search Time::2.422ms    
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