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http:// RFMD[RF Micro Devices] RF Micro Devices, Inc.
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Part No. |
NBB-X-K1 NBB-302 NBB-302-E NBB-302-T1
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OCR Text |
...dB@2GHz * High P1dB of +14.0dBm@6.0ghz and +11.0dBm@14.0GHz
Pin 1 Indicator 1 RF OUT 8 Ground 7 6 5 9 4 RF IN 2 3 Ground
* Single Power Supply Operation * 50 I/O Matched for High Freq. Use
Ordering Information
Cascadable Broadband... |
Description |
From old datasheet system CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 级联宽带GaAs MMIC放大器直流到12GHz
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File Size |
213.73K /
8 Page |
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it Online |
Download Datasheet |
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http:// RFMD[RF Micro Devices] RF Micro Devices, Inc.
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Part No. |
NBB-502-T3T NBB-502 NBB-502-E NBB-502-T1
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OCR Text |
...dB@2GHz * High P1dB of +14.0dBm@6.0ghz * Single Power Supply Operation * 50 I/O Matched for High Freq. Use
Pin 1 Indicator 1 RF OUT 8 Ground 7 6 5 9 4 RF IN 2 3 Ground
Ordering Information
Cascadable Broadband GaAs MMIC Amplifier DC ... |
Description |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz
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File Size |
211.23K /
8 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
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OCR Text |
...S CONDITIONS
VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm)
)#6' 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100...0GHz 12 -42 Limits Typ. Max. -5 45 13 7.5 45 -45 1.5 Unit V dBm dB A % dBc
deg.C/W
Parameter Sat... |
Description |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
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File Size |
248.84K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC39V4450A_04 MGFC39V4450A MGFC39V4450A04
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OCR Text |
...Po=28dBm S.C.L.
2MIN
(1)
0.6 +/-0.15
12.9 +/-0.2
(2)
(2)
R-1.6 11.3 2.6 +/-0.2
2MIN
(3)
10.7 17.0 +/-0.2
APPLICATIO...0GHz ID Drain current P.A.E. Power added efficiency IM3 3rd order IM distortion *1 Rth(ch-c) Thermal... |
Description |
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
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File Size |
180.23K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
MGF0911A 0911A
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OCR Text |
...
0
1
2
3
4
5
6
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN TO SOURCE VOLTAGE VDS(V)
PO & add vs. Pin (f=2.3GHz)
45 VDS=...0GHz +j10 3.0GHz 3.0GHz S22 0.5GHz 25 50 100 250 +j250 S21 5 4 3 2 0.5GHz 1 0
3.0GHz S12
0 S11... |
Description |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
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File Size |
21.84K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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