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Mitsubishi Electric Corporation
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| Part No. |
CM600HA-24H
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| OCR Text |
... 20v 15 12 11 8 7 t j = 25 o c 400 800 1000 10 9 1200 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 800 600 400 200 0 1200 1000 v ce = 10v t j = 25 c t j = 125 c... |
| Description |
IGBT Modules:1200V
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| File Size |
52.55K /
4 Page |
 View
it Online |
Download Datasheet
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GeneSiC Semiconductor, ...
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| Part No. |
GB01SHT12-CAU-15
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| OCR Text |
... 200 a/s t j = 210 c v r = 400 v 6 nc v r = 960 v 11 switching time t s v r = 400 v < 17 ns v r = 960 v total capa...1200 v i f @ 25 o c = 2.5 a q c = 6 nc ?
? die datasheet ... |
| Description |
High Temperature Silicon Carbide Power Schottky Diode
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| File Size |
283.39K /
5 Page |
View
it Online |
Download Datasheet |
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GeneSiC Semiconductor, ...
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| Part No. |
GB01SHT12-CAL-15
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| OCR Text |
... 200 a/s t j = 210 c v r = 400 v 6 nc v r = 960 v 11 switching time t s v r = 400 v < 17 ns v r = 960 v total capa...1200 v i f @ 25 o c = 2.5 a q c = 6 nc ?
? die datasheet ... |
| Description |
High Temperature Silicon Carbide Power Schottky Diode
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| File Size |
282.14K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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