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  4.9ghz Datasheet PDF File

For 4.9ghz Found Datasheets File :: 804    Search Time::1.172ms    
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    MGA-30489-BLKG MGA-30489-TR1G

AVAGO TECHNOLOGIES LIMITED
AVAGO TECHNOLOGIES LIMI...
Part No. MGA-30489-BLKG MGA-30489-TR1G
OCR Text ...30489 electrical specifcation [4] t c f=f25c,fz of =f50 ? ,fv df =f5v,funlessfnoted symbol parameter and test condition frequency units min...9ghz 1.9ghz 2.5ghz db C 2.8 3 3 3.5 3.6 gain gain 0.45ghz 0.9ghz 1.9ghz 2.5ghz db 11.8 19.3 16.5 13....
Description 0.25W Driver Amplifier

File Size 672.28K  /  18 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...3W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ...93 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.37K  /  7 Page

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 14 10V 5V dB 3V 2V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Paramet...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

File Size 49.50K  /  6 Page

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ...83 RHs Q62702-F1382 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 60.49K  /  7 Page

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ...ion Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 240 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1)...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  7 Page

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ... LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use p...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    MGA-31289-BLKG MGA-31289-TR1G

AVAGO TECHNOLOGIES LIMITED
Part No. MGA-31289-BLKG MGA-31289-TR1G
OCR Text ...cy at p1db 1.9ghz 2.5ghz % C 36.4 34.8 C irl input return loss 1.9ghz 2.5ghz db C 16.2 15.5 C orl output return loss 1.9ghz 2.5ghz db C 10.3 10.8 C isol isolation 1.9ghz 2.5ghz db C 27.3 27.7 C notes: 1. typical performance obtained from ...
Description 0.25W High Gain Driver Amplifier

File Size 444.23K  /  13 Page

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    BFR280 Q62702-F1298

http://
SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...5.htm Semiconductor Group 4 Dec-11-1996 BFR 280 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 100...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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    CHR3762-QDG21 CHR3762-QDG20

United Monolithic Semiconductors
Part No. CHR3762-QDG21 CHR3762-QDG20
OCR Text ... ums r3762 yyww ? ? 0 2 4 6 8 10 12 14 16 18 20 4 4,5 5 5,5 6 6,5 7 7,5 8 8,5 9 9,5 10 10,5 11 conversion gain & noise figure (db) ...9ghz integrated down converter ref. : dschr3762 - qdg2335 - 30 nov 12 2 / 16 specifica...
Description 5.5-9GHz Integrated Down Converter

File Size 439.01K  /  16 Page

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