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  3mh Datasheet PDF File

For 3mh Found Datasheets File :: 794    Search Time::1.141ms    
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    TSM210N06 TSM210N06CZ

Taiwan Semiconductor Company, Ltd
Part No. TSM210N06 TSM210N06CZ
OCR Text ... 650 a avalanche current, l=0.3mh i as , i ar 113 a avalanche energy, l=0.3mh e as , e ar 1900 mj maximum power dissipation t c =25c p d 250 w t c =70c 160 t a =25c 2 t a =70c 1.3 storage temperature range t stg ...
Description 60V N-Channel Power MOSFET

File Size 57.14K  /  4 Page

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    FDS8958A10 FDS8958A FDS8958AF085

FAIRCHILD SEMICONDUCTOR CORP
Part No. FDS8958A10 FDS8958A FDS8958AF085
OCR Text ... 2.0% 3. Starting TJ = 25C, L = 3mh, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mh, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A_F085 Rev. A 3 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench...
Description 30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench MOSFET
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

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    ST Microelectronics
Part No. STGB20NB37LZ
OCR Text ... secondary coil r goff =1k w ,l=3mh,tc=25c 21.6 26 a r goff =1k w , l = 3mh ,tc=150c 15 18 a symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc =250v,i c =20a r g =1k w ,v ge = 4.5 v 2.3 s t r rise time 0.6...
Description N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT

File Size 397.83K  /  9 Page

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    DMP2038USS-15

Diodes Incorporated
Part No. DMP2038USS-15
OCR Text ... avalanche current (note 7) l=0.3mh i as 13.2 a avalanche energy (note 7) l=0.3mh e as 26 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6) p d 2.5 w thermal resistance, j...
Description 20V P-CHANNEL ENHANCEMENT MODE MOSFET

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    IRF530NPBF

International Rectifier
Part No. IRF530NPBF
OCR Text ... ? starting t j = 25c, l = 2.3mh r g = 25 w , i as = 9.0a, v gs =10v (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: ? i sd 9.0a, di/dt 410a/s, v dd v (br...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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    PLY10AN1521R6R2B PLY10AN4420R8D2B PLY10AN1121R7D2B PLY10AN1121R8R2B PLY10AN1130R5D2B PLY10AN1421R4D2B PLY10AN2121R4R2B P

Murata Manufacturing Co., Ltd.
Part No. PLY10AN1521R6R2B PLY10AN4420R8D2B PLY10AN1121R7D2B PLY10AN1121R8R2B PLY10AN1130R5D2B PLY10AN1421R4D2B PLY10AN2121R4R2B PLY10AN2321R2D2B PLY10AN2821R2R2B PLY10AN4321R0R2B PLY10AN3521R0D2B PLY10AN6220R8R2B PLY10AN7012R0D2B PLY10AN8720R7D2B PLY10AN9012R0R2B PLY10AN9920R6R2B PLY10AN9720R6D2B PLY10AN1430R5R2B PLY10AN8720R7R2B
OCR Text ...1.2a 300vac ply10an4321r0r2 p 4.3mh 300h 1.0a 300vac ply10an6220r8r2 p 6.2mh 400h 0.8a 300vac ply10an8720r7r2 p 8.7mh 530h 0.7a 300vac ply10an9920r6r2 p 9.9mh 690h 0.6a 300vac ply10an1430r5r2 p 14.0mh 1000h 0.5a 300vac operating temperature...
Description AC Line Filters Hybrid Choke Coils

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    RENCO ELECTRONICS INC
Part No. RL-1123-.22000.2 RL-1123-.00180.2 RL-1124-1.50.2
OCR Text ...7 2.7mh .190 1.12 rl-1123-3.3 3.3mh .295 1.12 rl-1123-3.9 3.9mh .287 .88 rl-1123-4.7 4.7mh .364 .88 rl-1123-5.6 5.6mh .440 .707 rl-1123-6.8 6.8mh .662 .556 rl-1123-8.2 8.2mh .700 .556 rl-1123-10 10.0mh .741 .556 rl-1123-12 12.0mh .827 .556 ...
Description 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

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    TSM75N75

Taiwan Semiconductor Company, Ltd
Part No. TSM75N75
OCR Text ...300 a avalanche current, l=0.3mh i as , i ar 53 a avalanche energy, l=0.3mh e as , e ar 400 mj maximum power dissipation t c =25c p d 87 w t c =70c 56 t a =25c 2 t a =70c 1.3 storage temperature range t ...
Description 75V N-Channel Power MOSFET

File Size 57.08K  /  4 Page

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    TSM85N10

Taiwan Semiconductor Company, Ltd
Part No. TSM85N10
OCR Text ...320 a avalanche current, l=0.3mh i as , i ar 64 a avalanche energy, l=0.3mh e as , e ar 620 mj maximum power dissipation t c =25c p d 210 w t c =70c 130 t a =25c 2.4 t a =70c 1.5 storage temperature range ...
Description 100V N-Channel Power MOSFET

File Size 57.19K  /  4 Page

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    FDS8958A08 FDS8958A

Fairchild Semiconductor
Part No. FDS8958A08 FDS8958A
OCR Text ... 2.0% 3. Starting TJ = 25C, L = 3mh, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mh, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A Rev F3 (W) FDS8958A Typical Characteristics: Q1 (N-Channel) 20 16 ID, DRAIN C...
Description Dual N & P-Channel PowerTrenchO MOSFET

File Size 477.95K  /  8 Page

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For 3mh Found Datasheets File :: 794    Search Time::1.141ms    
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