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  20v- Datasheet PDF File

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    AP4500GM14

Advanced Power Electronics Corp.
Part No. AP4500GM14
OCR Text ... drive requirement n-ch bv dss 20v low gate charge r ds(on) 30m fast switching performance i d 6a p-ch bv dss -20v r ds(on) 50m description i d -5a absolute maximum ratings symbol parameter rating units n-channel p-chann...
Description Simple Drive Requirement

File Size 117.43K  /  7 Page

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    SamHop Microelectronics
Part No. SP3906
OCR Text ...50ua v ds =28v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 104.05K  /  7 Page

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    2SD1051

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1051
OCR Text ...CEO hFE *1 Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = IC = 2A, IB = 1A*2 IC = 1.5A, IB = 0.15A*2 0.2A*2 VCB = 5V, IE = -0.5A*2, f = 200MHz VCB = 20V, IE = 0, f = 1MHz...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 39.28K  /  2 Page

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    AO3420 AO342011 AO3420-11

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3420 AO342011 AO3420-11
OCR Text 20v n-channel mosfet general description product summary v ds i d (at v gs =10v) 6a r ds(on) (at v gs =10v) < 24m w r ds(on) (at v gs =4.5v) < 27m w r ds(on) (at v gs =2.5v) < 42m w r ds(on) (at v gs =1.8v) < 55m w sym...
Description 20V N-Channel MOSFET

File Size 225.24K  /  5 Page

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Part No. IRFP3415
OCR Text ...ard leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 200 i d = 22a q gs gate-to-source charge ??? ??? 17 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? ??? ...
Description 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC

File Size 504.57K  /  9 Page

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    SamHop Microelectronics
Part No. SP3900
OCR Text ...0ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown vol...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 108.83K  /  7 Page

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    Panasonic Battery Group
Part No. UR18650Y
OCR Text ... charge: cc - cv 1c (max) 4.20v, 4 hr cut - off at 20 c discharge: cc 1c, 2.75v cut - off at 20 c charge: cc - cv 1c (max) 4.20v, 38 ma cut - off at 20 c charge: cc - cv 1c (max) 4.20v, 38ma cut - off at 20...
Description Lithium Ion
   Lithium Ion

File Size 525.34K  /  1 Page

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    SamHop Microelectronics
Part No. SP3903
OCR Text ...0ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown vol...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 110.18K  /  7 Page

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    IRGR2B60KDPBF IRGR2B60KDTRPBF IRGR2B60KDTRRPBF IRGR2B60KDTRLPBF IRGR2B60KDPBF-15

International Rectifier
Part No. IRGR2B60KDPBF IRGR2B60KDTRPBF IRGR2B60KDTRRPBF IRGR2B60KDTRLPBF IRGR2B60KDPBF-15
OCR Text ...nductive load current, v ge = 20v ? 8.0 a i f @ t c = 25c diode continuous forward current 6.3 i f @ t c = 100c diode continuous forward current 3.7 i fm diode maximum forward current ? 8.0 v ge continuous g...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE

File Size 750.99K  /  12 Page

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