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Motorola
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| Part No. |
MHL19926
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| OCR Text |
...tion Application
MHL19926
1930-1990 MHz, 10 W, 29.4 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AY-01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Rang... |
| Description |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
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| File Size |
67.06K /
2 Page |
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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19030LSR3 MRF19030LR3
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| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MH... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
591.35K /
8 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MRF19030SR3 MRF19030R3
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| OCR Text |
... = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
446.17K /
8 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductor
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| Part No. |
MRF6S18060MR1
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| OCR Text |
...quency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 15 db drain efficiency - 50% gsm edge application ? typical gsm edge performance: v dd = 26 volts, i dq = 450 ma, p out = 25 watts avg., full frequency band (1805 - 1880 m... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
727.69K /
20 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18100NBR1
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| OCR Text |
...quency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 14.5 db drain efficiency ? 49% gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 40 watts avg., full frequency band (1805 - 1880 mh... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
703.35K /
20 Page |
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it Online |
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