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MICROSEMI[Microsemi Corporation]
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Part No. |
APT8018L2VR_06 APT8018L2VR APT8018L2VR06
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OCR Text |
43A
0.180
POWER MOS V(R) MOSFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
151.44K /
4 Page |
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it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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Part No. |
APT8018L2VFR
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OCR Text |
43A
0.180
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Powe... |
Description |
MOSFET POWER MOS V FREDFET
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File Size |
131.88K /
4 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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Part No. |
APT58M80J
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OCR Text |
... 25C, ID = 250A VGS = 10V, ID = 43A VGS = VDS, ID = 5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C
APT58M80J
Typ 0.87 0.09 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeffici... |
Description |
N-Channel MOSFET
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File Size |
257.72K /
4 Page |
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it Online |
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Renesas Electronics Corporation
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Part No. |
RJK0629DPE-00-J3 RJK0629DPE
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OCR Text |
... = 0 ID = 1 mA, VDS = 10 V ID = 43A, VGS = 10 V Note4 ID = 43A, VGS = 10 V Note4 ID = 43 A, VGS = 4.5 V Note4 VDS = 10 V, VGS = 0 f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 85 A VDD = 30V, ID= 43A, VGS = 10 V, RG = 4.7
IF = 85 A, VGS = 0 No... |
Description |
N Channel Power MOS FET High-Speed Switching Use
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File Size |
109.15K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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