tmos E-fet High Energy power fet N-Channel Enhancement-Mode Silicon Gate tmos power fet 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
tmos E-fet High Energy power fet N-Channel Enhancement-Mode Silicon Gate tmos power fet 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
tmos E-fet power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate tmos power fet 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM From old datasheet system
tmos E-fet power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos power fet 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM From old datasheet system
tmos E-fet power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos power fet 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM tmos是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
tmos E-fet power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate tmos power fet 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM From old datasheet system
From old datasheet system tmos power fet 3.0 AMPERES 1000 VOLTS tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos power fet 2.0 AMPERES 600 VOLTS From old datasheet system
tmos E-fet High Energy power fet D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate tmos power fet 4.0 AMPERES 800 VOLTS From old datasheet system
From old datasheet system tmos power fet 3.0 AMPERES 600 VOLTS tmos E-fet High Energy power fet D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate