tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate tmos POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
tmos E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system tmos POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
tmos E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system tmos POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
tmos POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system tmos V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos POWER FET 10 AMPERES 1000 VOLTS
tmos E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
tmos E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM