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				MURATA[Murata Manufacturing Co., Ltd.]
Part No.	PTWSB2AG201T260A00 PTWSB2AH201T260A00 PTWTA1AD201T260A00 PTWSB1BC201T260A00 PTWSB1AS201T260A00
OCR Text	....0 in mm s Applications heated vessels (electronic jars, tea pots, etc.) Contact lens cleaner Portable travel iron Massager Fragrance Electric pot Curie Point (C) 90 (BC) 135 (AS) 205 (AH) 225 (AG) 280 (AD) Max. Volt. Inrush C...
Description	POSISTOR for Heater
File Size	126.14K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	SMUN5214DW1T1G
OCR Text	...214dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual NPN Bias Resistor Transistors
File Size	142.43K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	SMUN5213DW1T1G NSBC144EDP6 NSBC144EDP6T5G NSBC144EDXV6T1G NSBC144EDXV6T5G
OCR Text	...213dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
File Size	147.50K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	SMUN5211DW1T1G NSBC114EDXV6 NSBC114EDP6
OCR Text	...211dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual NPN Bias Resistor Transistors
File Size	141.92K / 8 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	15MPA0566
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	11.0-19.0 GHz GaAs MMIC Power Amplifier 11000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
File Size	145.60K / 6 Page	View it Online	Download Datasheet

				Skyworks Solutions Inc.
Part No.	DSM8100-000
OCR Text	...ghtly against one beam with the heated tip. The substrate can then be appropriately positioned under the tip and the device brought down against the substrate, with proper pressure applied by means of the weld head. A bonding tip temperatur...
Description	Mesa Beam Lead PIN Diode
File Size	59.37K / 5 Page	View it Online	Download Datasheet

				MIMIX BROADBAND INC
Part No.	XP1054-BD-000V
OCR Text	...d. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximatel...
Description	33000 MHz - 36000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
File Size	93.71K / 2 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSBA143TDXV6T5G NSBA143TDXV6T1G SMUN5116DW1T1G
OCR Text	...116dw1 (sot ? 363) one junction heated total device dissipation t a = 25 ? c (note 1) (note 2) derate above 25 ? c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ ? c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 ? ...
Description	Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 = kOhm
File Size	127.45K / 6 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	15OSC0502
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	921.70K / 5 Page	View it Online	Download Datasheet

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