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TOSHIBA
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| Part No. |
GT60M303
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| OCR Text |
...cement ? mode high speed i gbt : t f = 0.25s (typ.) frd : t rr = 0.7s (typ.) low saturation voltage : v ce (sat) = 2. 1 v (typ.) maximum ratings (ta = 25c) characteristic symbol rating unit collector ? emitter volt... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL Igbt HIGH POWER SWITCHING APPLICATIONS
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| File Size |
265.23K /
6 Page |
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it Online |
Download Datasheet
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STMicroelectronics N.V.
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| Part No. |
DIM150CHS17-E
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| OCR Text |
...orward characteristics fig. 8 i gbt reverse bias safe operating area fig. 9 di ode reverse bias safe operating area 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400 1600 1800 collector-emitter voltage, v ce - (v) collector current, i... |
| Description |
Igbt Modules - Half Bridge Igbt模块-半桥
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| File Size |
145.74K /
8 Page |
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it Online |
Download Datasheet |
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MICROSEMI CORP-SCOTTSDALE
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| Part No. |
HSM180JE3/TR13
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| OCR Text |
... & v dm o s | m o sfe t s , i gbt s , & diodes | p in diodes | p ower m odules rf p ower & bipolar t rans is tors | s-band radar | sc r | t hyris tors | v arac ter diode | wla n p ower a mplifier | zener diode | p ower... |
| Description |
1 A, 80 V, SILICON, SIGNAL DIODE, DO-214BA
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| File Size |
312.35K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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