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TOSHIBA
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| Part No. |
TK1P90A
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| OCR Text |
...ckaging and internal circuit 1: gate (g) 2: drain (d) (heatsink) 3: source (s) 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a ... |
| Description |
Power MOSFET (N-ch 700V<VDSS)
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| File Size |
248.46K /
9 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
IRKV56-12
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| OCR Text |
...de supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v,resistive load v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-sta... |
| Description |
Silicon Controlled Rectifier, 86.35 A, 1200 V, SCR, TO-240AA
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| File Size |
128.82K /
9 Page |
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it Online |
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| Part No. |
IRFP3415
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| OCR Text |
... derating factor 1.3 w/ v gs gate-to-source voltage 20 v e as single pulse avalanche energy 590 mj i ar avalanche current 22 a e ar repetitive avalanche energy 20 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junc... |
| Description |
43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
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| File Size |
504.57K /
9 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
DMP2012SN-7
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| OCR Text |
... s ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? lead free by design/rohs compliant (note 2) ? esd protected gate ? "green" device (note 4) ? qualified to aec-q101 standards... |
| Description |
Low On-Resistance
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| File Size |
83.58K /
1 Page |
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it Online |
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Price and Availability
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