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ST Microelectronics
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| Part No. |
STE45NK80ZD
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| OCR Text |
...e ESD(HBM-C=100pF, R=1.5k) Peak diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS) from All Four Terminals to External Heatsink Operating Junction Temperature Storage Temperature Value 800 800 30 45 28 180 600 5 7 8 2500 Un... |
| Description |
N-CHANNEL 800V - 0.11 OHM - 45A ISOTOP FAST diode SUPERFREDMESH MOSFET
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| File Size |
221.49K /
10 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STS10DN3LH5
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| OCR Text |
...l ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, VGS = 0 ISD = 10 A, VDD = 25 V di/dt = ... |
| Description |
Power MOSFETs
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| File Size |
791.31K /
13 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NX8341TJ-AZ NX8341UJ-AZ NX8341TB-AZ NX8341UB-AZ
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| OCR Text |
diode
NX8341 Series
1 310 nm AlGaInAs MQW-DFB LASER diode FOR 10 Gb/s APPLICATION
DESCRIPTION
The NX8341 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical s... |
| Description |
1 310 nm AlGaInAs MQW-DFB LASER diode FOR 10 Gb/s APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管0 Gb / s的应
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| File Size |
249.68K /
13 Page |
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it Online |
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Vishay
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| Part No. |
TSOP11..XG1
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| OCR Text |
...red remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation wit... |
| Description |
IR Receiver Modules for Remote Control Systems
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| File Size |
153.12K /
7 Page |
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it Online |
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Price and Availability
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