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dc-8 Datasheet PDF File

For dc-8 Found Datasheets File :: 277085 Search Time::5.484ms
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				ONSEMI[ON Semiconductor]
Part No.	MCR72-8 MCR72-3 MCR72-6 ON1829 MCR72-D
OCR Text	...ate Trigger Current (Continuous dc)(2) (VD = 12 V, RL = 100 ) Gate Trigger Voltage (Continuous dc)(2) (VD = 12 V, RL = 100 ) Gate Non-Trigge...8 Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol ...
Description	Sensitive Gate Silicon Controled Rectifiers Reverse Blocking Thyristor SCRs 8 AMPERES RMS 100 thru 600 VOLTS SENSITIVE GATE SILICON CONTROLLED RECTIFIERS From old datasheet system
File Size	80.92K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	CR6CM-8 CR6CM-12
OCR Text	...125 2.0 symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse ...8 400 500 320 400 320 voltage class type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	75.21K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text	...nit V V mA W C C Recommended DC Operating Conditions (Ta = 0 to +70C)*2 Parameter Supply voltage Symbol VSS Min 0 Typ 0 5.0 5.0 -- -- Max 0 5.5 5.25 6.5 0.8 Unit V V V V V Notes 2 1, 2 1, 2 1 1 VCC (HM51(S)4260C-6/7/8) 4.5 VCC (HM51(...
Description	80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
File Size	260.25K / 27 Page	View it Online	Download Datasheet

				Intersil, Corp. HARRIS SEMICONDUCTOR
Part No.	HS9-6617RH-8 HS1-6617RH-8
OCR Text	.... . . . . +2.4v to vdd table 1. dc electrical performance characteristics device guaranteed and 100% tested. parameter symbol (notes 1, 2) c...8 recorded for -8 initial test 100% 5004 1, 7, 9 1 (note 2) 1, 7, 9 interim test 100% 5004 1, 7, 9, ...
Description	Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 120 ns, CDFP24
File Size	130.79K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text	...CC3N, ICC4, ICC5, ICC6, ICC7 in DC CHARACTERISTICS. * Changed tSAC from 6 to 6.5 @ 125MHz, tSS from 2 to 2.5 @ 125MHz in AC PARAMETER . * De...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
File Size	1,032.84K / 51 Page	View it Online	Download Datasheet

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