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				MOSEL[Mosel Vitelic, Corp]
Part No.	V53C318165A V53C318165A50 V53C318165A60 V53C318165A70
OCR Text	access Time, (tRAC) Max. Column Address access Time, (tCAA) Min. Extended Data Out Page Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (...precharge Time CAS Hold Time CAS Pulse Width RAS to CAS Delay Read Command Setup Time Row Address Se...
Description	3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM
File Size	266.08K / 18 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.] ETRON[Etron Technology Inc.]
Part No.	EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text	...S is asserted "LOW," the column access is started by asserting /CAS "LOW." Then, the Read or Write command is selected by asserting /WE "HIG...precharge command and Read or Write command. Bidirectional Data Strobe: Specifies timing for Input a...
Description	4M x 16 DDR Synchronous DRAM (SDRAM)
File Size	154.94K / 26 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...t Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V)...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...e Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Alliance Semiconductor ...
Part No.	AS4LC256K16EO-60JC AS4LC256K16EO-60TC
OCR Text	...its high speed - 45/60 ns ras access time - 10/12/15/20 ns column address access time - 7/10/10 ns cas access time low power consumptio...precharge time 15 ? 20 ? 20 ? ns t ras ras pulse width 35 75k 45 75k 60 75k ns t cas cas pulse wid...
Description	3.3V 256K X 16 CMOS DRAM (EDO)
File Size	521.98K / 25 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...e Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...e Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) a...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...e Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are o...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...t Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are op...precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM636165TS
OCR Text	...nov. /2011) features ? fast access time: 4.5/5.4/5.4ns ? fast clock rate: 200/166/143 mhz ? self refresh mode: standard ? inter...precharge function may be enabled to provide a self-timed row precharge that is initiat ed at the ...
Description	1M x 16 bit Synchronous DRAM (SDRAM)
File Size	492.30K / 52 Page	View it Online	Download Datasheet

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