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STMICROELECTRONICS
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| Part No. |
STB11NM60-1 STB11NM60T4
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| OCR Text |
...se transfer capacitance v ds =25v, f=1 mhz, v gs =0 1000 230 25 pf pf pf c oss eq (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds inceases from 0 to 80% v dss equival... |
| Description |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
346.06K /
16 Page |
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ST MICROELECTRONICS
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| Part No. |
STD2NC45-1
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| OCR Text |
...e transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 160 27.5 4.7 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 360v, i d = 1.5a, v gs = 10v, r g =4.7 ? (see figure 18) 7 1.3 3.2 10 nc nc nc ... |
| Description |
N-channel MOSFET
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| File Size |
532.76K /
15 Page |
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ST Microelectronics
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| Part No. |
STD10NF10-1
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| OCR Text |
...itions VDS = 15V, ID = 5A VDS = 25v, f = 1 MHz, VGS = 0 Min. Typ. 20 460 70 30 15.3 3.7 4.7 21 Max. Unit S pF pF pF nC nC nC
VDD = 80V, ID = 10A VGS = 10V
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 5.
Symbol td(on) tr t... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
459.29K /
14 Page |
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ST Microelectronics
意法半导
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| Part No. |
STD17NF03L-1 STD17NF03LT4
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| OCR Text |
...e transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 320 155 28 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15v, i d = 8.5a r g =4.7 ? v gs = 5v (see figure 16) 11... |
| Description |
N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET
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| File Size |
242.75K /
11 Page |
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