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Mitsubishi Electric Corporation
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| Part No. |
MH32S72APHB-7 MH32S72APHB-8 MH32S72APHB-6
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| OCR Text |
...e without notice. mit-ds-0380-0.1 description the mh32s72aphb is 33554432 - word by 72-bit synchronous dram module. this consists of eigh...7,8:100mhz single 3.3v0.3v power supply fully synchronous operation referenced to clock rising edge... |
| Description |
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:16VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:6900uF RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:100VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:78uF RoHS Compliant: Yes
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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| File Size |
715.44K /
55 Page |
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Diodes Inc.
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| Part No. |
2N7002VAC-7 2N7002VC-7
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| OCR Text |
1 of 3 2n7002vc/va c www.diodes.co m ? diodes incorporated 2n7002vc /vac dual n-cha...7.5 13.5 w v gs = 5v, i d = 0.05a , v gs = 10v, i d = 0.5a , t j = 125 c on-state drain curren... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
151.02K /
3 Page |
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it Online |
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Diodes Inc.
Diodes, Inc.
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| Part No. |
2N7002V-7-L 2N7002VA-7-L
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| OCR Text |
1 of 3 2n7002v/va www.diodes.com diodes incorporated 2n7002v/va dual n-channel enhancement mode field effect transistor features dual n-...7.5 13.5 v gs = 5v, i d = 0.05a, v gs = 10v, i d = 0.5a, t j = 125c on-state drain current i d(on)... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 双N沟道增强型场效应晶体
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| File Size |
62.38K /
3 Page |
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it Online |
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Diodes Inc.
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| Part No. |
BAT46W-7-F
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| OCR Text |
1 of 3 bat46 w www.diodes.co m ? diodes incorporated bat46w surface mo unt schottky b...7.5 1.0 15 2.0 20 m a v r = 1.5v v r = 1.5v, t j = 60 c v r = 10v v r = 10v, t j = 60 c v ... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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| File Size |
340.79K /
3 Page |
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it Online |
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SIEMENS AG
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| Part No. |
HYB39S16160CT-7 HYB39S16160CT-5.5 HYB39S16160CT-6
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| OCR Text |
1 09.99 the hyb 39s16160ct-5.5/-6/-7 are high-speed dual-bank synchronous drams organized as 2banks 512 kbit 16. these synchronous devices achieve high-speed data transfer rates up to 183 mhz by employing a chip architecture that prefetc... |
| Description |
1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M1M × 16)同步动态RAM(用于高速图形场)
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| File Size |
111.85K /
19 Page |
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it Online |
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Diodes Inc.
Diodes, Inc.
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| Part No. |
MMBZ9V1AL-7-F MMBZ5V6AL-7-F MMBZ6V8AL-7-F
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| OCR Text |
1 of 4 mmbz 5v6al - mmbz 33val www.diodes.co m ? diodes incorporated mmbz5v6a l - m...7 2.76 +0.04 mmbz6v8al k9c 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 +0.045 mmbz9v1al k9d 6.0 0.3 8.65 9.1 9... |
| Description |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
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| File Size |
440.47K /
4 Page |
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it Online |
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