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				Mitsubishi Electric Semiconductor
Part No.	M6MGT162S2BVP
OCR Text	16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) M6MGB/T162S2BVP MITSUBISHI LSIs DESCRIPTION FEATURES * Access time The...
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
File Size	229.04K / 28 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M6MGT162S4BVP M6MGB162S4BVP
OCR Text	16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) MITSUBISHI LSIs DESCRIPTION FEATURES The MITSUBISHI M6MGB/T162S4BVP is a...
Description	CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
File Size	232.77K / 28 Page	View it Online	Download Datasheet

				ASI ETC[ETC] AUSTIN[Austin Semiconductor]
Part No.	AS4LC1M168 AS4LC1M16883C AS4LC1M16
OCR Text	16 DRAM PRELIMINARY DRAM AVAILABLE AS MILITARY SPECIFICATIONS * MIL-STD 883 * SMD Planned 1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPT...777,216 bits organized in a x16 configuration. The AS4LC1M16 has both BYTE WRITE and WORD WRITE acce...
Description	1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
File Size	192.35K / 22 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp Mosel Vitelic, Corp
Part No.	V54C316162V V54C316162 V54C316162V-55 V54C316162V-5 V54C316162V-6 V54C316162V-7
OCR Text	16 SDRAM 2 BANKS X 512Kbit X 16 s JEDEC Standard 3.3V Power Supply s The V54C316162V is ideally suited for high performance graphics peri...777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device i...
Description	200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
File Size	147.98K / 21 Page	View it Online	Download Datasheet

				SPANSION[SPANSION]
Part No.	AM29LV2562ML120RPII AM29LV2562M AM29LV2562MH120RPII
OCR Text	...RY Am29LV2562M 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Contr...777,216 doublewords or 33,554,432 words. The device has a 32-bit wide data bus that can also functio...
Description	512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
File Size	531.29K / 69 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16D72AKLB-10 MH16D72AKLB-75
OCR Text	...2AKLB-10,75 1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module DESCRIPTION The MH16D72AKLB is 16777216 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module. This consists of 9 indus...
Description	1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
File Size	344.98K / 39 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58FVB160AFT-70 TC58FVB160AFT TC58FVB160AF TC58FVB160AFT-10 TC58FVT160 TC58FVT160AFT
OCR Text	16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words x 8 bits or as 1,048,576 words x ...
Description	Flash - NOR 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
File Size	534.72K / 41 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD23C16000BL UPD23C16000BLGX UPD23C16000BLGX-XXX UPD23C16000BLGY-MJH
OCR Text	16-BIT (WORD MODE) Description The PD23C16000BL is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits). The active levels of OE (Ou...
Description	16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
File Size	318.07K / 19 Page	View it Online	Download Datasheet

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