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SEME-LAB[Seme LAB]
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| Part No. |
D1010UK
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| OCR Text |
...78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4
* LOW Crss * SIMPLE BIAS CIRCUITS
Inches 0.75 0.424 45 0.385 0.225 1.100 0.060R 0.... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
49.94K /
5 Page |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
D10-28 D1028
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| OCR Text |
...NGS
IC VCEO PDISS TJ TSTG JC 1.0 A 30 V 20 W @ TC = 25 C -65 to +200 C -65 to +150 C 8.8 C/W
O
DIM A B C D E F G H I J K
MINIMUM
inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 ... |
| Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR
From old datasheet system
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| File Size |
13.41K /
1 Page |
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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
D1-28Z ASI10573 ASI10732 AVF350
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| OCR Text |
... Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L STUD
A 45
C
B
FEATURES:
* PG = 8.0 dB Typ. at 1 W/1,000 MHz * Emitter Ballasting for Ruggedness * OmnigoldTM Metallization System
D
E B
C
E
J E F G I
MAX... |
| Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR
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| File Size |
16.68K /
1 Page |
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it Online |
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Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
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| Part No. |
CZTUX87
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| OCR Text |
... ICM IB PD TJ,Tstg JA 900 450 5.0 0.5 1.0 1.0 2.0 -65 to +150 62.5
UNITS V V V A A A W C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) hFE fT ts tf TEST CONDITIO... |
| Description |
Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-4
SURFACE MOUNT HIGH VOLTAGE NPN POWER TRANSISTOR
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| File Size |
106.64K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CZTA27
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| OCR Text |
...O IC PD TJ,Tstg QJA 60 10 500 2.0 -65 to +150 62.5 UNITS V V mA W C C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO ICES IEBO BVCBO BVCES VCE(SAT) VBE(ON) hFE hFE fT TEST CONDITIONS VCB=50V VCE=50V VEB=10V IC=... |
| Description |
NPN HIGH VOLTAGE DARLINGTON TRANSISTOR
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| File Size |
46.53K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CZT7090L
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| OCR Text |
...CBO VCEO VEBO IC ICM PD 50 40 5.0 3.0 6.0 2.0 UNITS V V V A A W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE f... |
| Description |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
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| File Size |
72.51K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CZT5401
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| OCR Text |
...Thermal Resistance
160 150 5.0 600 2.0 -65 to +150 62.5
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VCB=1... |
| Description |
PNP SILICON TRANSISTOR
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| File Size |
91.78K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CZT5338
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| OCR Text |
...Thermal Resistance
100 100 6.0 5.0 1.0 2.0 -65 to +150 62.5
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO ICEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE TEST CONDITIONS VCB=100V VBE=6.0V VCE=... |
| Description |
NPN SILICON POWER TRANSISTOR
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| File Size |
98.16K /
2 Page |
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it Online |
Download Datasheet |
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