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Hamamatsu Photonics
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Part No. |
S3921 S3921-512Q S3921-128Q
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Description |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: to-220fn
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File Size |
232.29K /
6 Page |
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Part No. |
2SB1370C7/E 2SB1290C7/DE 2SB1369/F 2SB1335A/EF 2SB1335AC7/DE 2SB1335A/DF 2SD2400/EF 2SB1289C7/D 2SB1289C7/E 2SB1289C7F 2SB1289/DF 2SB1289/EF 2SB1289C7D
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Description |
3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220FP 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP 1.5 A, 120 V, NPN, Si, POWER TRANSISTOR, to-220fn
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File Size |
110.00K /
2 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
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Description |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: to-220fn MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: to-220fn MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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File Size |
2,173.74K /
160 Page |
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Hamamatsu Photonics K.K.
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Part No. |
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q S4111-35Q
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Description |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: to-220fn MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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File Size |
126.96K /
4 Page |
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it Online |
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![NCP1117XT12 NCP1117ST15T3 NCV1117ST15T3 NCP1117DT2 NCP1117ST33T3G NCP1117ST33T3 NCP1117DTARKG NCP1117DT50RKG NCP1117DT18](Maker_logo/on_semiconductor.GIF)
ONSEMI[ON Semiconductor]
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Part No. |
NCP1117XT12 NCP1117ST15T3 NCV1117ST15T3 NCP1117DT2 NCP1117ST33T3G NCP1117ST33T3 NCP1117DTARKG NCP1117DT50RKG NCP1117DT18RKG NCP1117DT15RKG NCP1117DT12 NCP1117DT12RK NCP1117DT15RK NCP1117DT18 NCP1117DT18RK NCP1117DT18T5 NCP1117DT18T5G NCP1117DT20 NCP1117DT20RK NCP1117DT25 NCP1117DT25RK NCP1117DT25RKG NCP1117DT25T5 NCP1117DT285 NCP1117DT285RK NCP1117DT33 NCP1117DT33RKG NCP1117DT33T5 NCP1117DT33T5G NCP1117DT50 NCP1117DT50RK NCP1117DTA NCP1117DTAG NCP1117DT12T3 NCP1117DT15 NCP1117DT33RK NCV1117ST12T3 NCV1117ST12T3G NCV1117STAT3 NCV1117STAT3G NCP1117STAT3 NCP1117STAT3G NCV1117ST25T3 NCP1117 NCP1117DTARK NCP1117DTAT5 NCP1117ST15T3G NCP1117ST18T3 NCP1117ST18T3G NCP1117ST20T3 NCP1117ST20T3G NCP1117ST25T3 NCP1117ST25T3G NCP1117ST285T3 NCP1117ST50T3 NCP1117XT285 NCP1117XT50 NCP1117XTA NCV1117 NCV1117DT15RK NCV1117DT15RKG NCV1117DT18T5 NCV1117DT25RK NCV1117DT33T5 NCV1117DT50RK NCV1117DTARK ONSEMICONDUCTOR-NCV1117DT15RKG
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Description |
1.0 A Low-Dropout Positive Fixed and Adjustable Voltage Regulators 1.25 V-18.8 V ADJUSTABLE POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2 GIGATRUE 550 CAT6 PATCH 6 FT, SNAGLESS, WHITE 1.0低压差正,固定和可调电压调节 1.0 A Low-Dropout Positive Fixed and Adjustable Voltage Regulators 1.5 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2 FF-SYB Series, type 4 two-beam access control systems 12 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2 1.0 A Low-Dropout Positive Fixed and Adjustable Voltage Regulators 1.5 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PDSO4 1.0 A Low-Dropout Positive Fixed and Adjustable Voltage Regulators 2 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PDSO4 MOSFET N-CH 200V 15A to-220fn GIGATRUE 550 CAT6 PATCH 5 FT, SNAGLESS, WHITE GIGATRUE 550 CAT6 PATCH 7 FT, SNAGLESS, WHITE
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File Size |
144.26K /
16 Page |
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Price and Availability
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