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HIROSE ELECTRIC Co., Ltd.
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Part No. |
OM6039SM
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Description |
200v , 9 Amp, N-Channel Power MOSFET(200v , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200v9A条,沟道,功率马鞍山场效应管
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File Size |
8.07K /
1 Page |
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it Online |
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Electronic Theatre Controls, Inc.
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Part No. |
BD140-25 BD136-25 BD138-25
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Description |
TRANSIStoR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | to-126 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, vdrm:200v; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes TRANSIStoR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | to-126 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|126
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File Size |
27.95K /
3 Page |
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it Online |
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Omnirel International Rectifier, Corp.
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Part No. |
OM6035NM
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Description |
200v, N-Channel, 30Amp MOSFET(200v ,30A, N沟道,MOS场效应管) 00V,N沟道30Amp MOSFET的(00V0A条,沟道来说,MOS场效应管
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File Size |
32.00K /
4 Page |
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it Online |
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Part No. |
STIP10 STI60 STI80 STI90 STIP805 STIP60
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Description |
SURGE ARRESTER GDT 90V SMD DIODE TVS 9.1V 600W BIDIR 5% SMB TRANSIStoR | BJT | NPN | 900V V(BR)CEO | 1A I(C) | to-5 DIODE TVS 47V 600W UNIDIR 5% SMB 晶体管|晶体管|叩| 600V的五(巴西)总裁| to - 39封装 Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, vdrm:200v; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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File Size |
125.32K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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