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  rn-171 Datasheet PDF File

For rn-171 Found Datasheets File :: 186    Search Time::1.328ms    
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    NE334S01 NE334S01-T1 NE334S01-T1B

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE334S01 NE334S01-T1 NE334S01-T1B
OCR Text ...82 127 175 -139 -100 -70 -56 Rn/50 0.19 0.18 0.13 0.08 0.07 0.10 0.17 0.29 0.46 7 NE334S01 TYPICAL MOUNT PAD LAYOUT 2.4 mm TYP. 8 2.4 mm TYP. NE334S01 RECOMMENDED SOLDERING CONDITIONS The following conditions (see t...
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应

File Size 72.14K  /  12 Page

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    INA-12063 INA-12063-BLK INA-12063-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INA-12063 INA-12063-BLK INA-12063-TR1
OCR Text ...B) 1.4 opt Mag. 0.6 opt Ang. 36 RN () 23 GAIN (dB) 30 25 20 MSG 15 MAG 10 |S21|2 5 0 0.1 0.9 1.7 2.5 FREQUENCY (GHz) 6-11...171 161 153 144 135 128 122 116 110 104 100 95 91 87 83 79 76 72 69 66 62 59 56 54 51 48 45 42 39 37...
Description 1.5 GHz Low Noise Self-Biased Transistor Amplifier

File Size 331.76K  /  24 Page

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    NT3960

ETC
Part No. NT3960
OCR Text ...6 V3, V8 Total impedance, Rn=R0 ~ R62, equals 18.5K 6 NT3960 TFT LCD Source Driver Output Voltage V.S. Input Data Data 00H 01H...171 172 173 174 175 176 177 178 179 180 Designation NC D02 D02 D02 D01 D01 D01 D00 D00 D00 NC CLK CL...
Description TFT LCD Source Driver

File Size 221.97K  /  20 Page

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    THN6301U

List of Unclassifed Manufacturers
ETC
Part No. THN6301U
OCR Text ...VCE=8V, Ic=5mA,f=1GHz MSG NFmin rn GA OIP3 Maximum Stable Gain VCE=8V, Ic=15mA,f=1GHz Minimum Noise Figure VCE=8V, Ic=5mA,f=1GHz Noise Resis...171.144 0.623 / -177.725 0.630 / 176.974 0.646 / 172.598 0.655 / 168.349 0.666 / 164.332 0.679 / 159...
Description NPN Planer RF TRANSISTOR

File Size 102.07K  /  10 Page

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    NE76000 NE76000L

NEC Corp.
NEC[NEC]
Part No. NE76000 NE76000L
OCR Text ... 25 45 65 83 99 114 125 135 145 Rn/50 .69 .63 .49 .41 .36 .32 .27 .23 .20 .18 Notes: 1. Operation in excess of any one of these parameter...171.0 178.0 164.0 MAG 3.291 3.282 3.280 3.265 3.218 3.185 3.079 2.950 2.814 2.669 2.545 2.446 2.328 ...
Description LOW NOISE L TO Ku BAND GaAs MESFET

File Size 51.86K  /  6 Page

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    AT-42000 AT-42000-GP4

HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. AT-42000 AT-42000-GP4
OCR Text ... .23 .47 Ang 13 69 127 171 -154 RN/50 0.13 0.13 0.12 0.11 0.14 4-152 AT-42000 Chip Dimensions 30 m DIA 1.18 mil Base Pad 90 m 3.54 mil 305 m 12 mil Emitter Pad 305 m 12 mil Note: Die thickness is 5 to 6 mil. 4-15...
Description Up to 6 GHz Medium Power Up to 6 GHz Medium Power GHz中等功率高达6 GHz的中等功

File Size 51.05K  /  5 Page

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    AT-42035

HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. AT-42035
OCR Text ....20 .51 Ang 10 66 150 -178 -110 RN/50 0.13 0.12 0.12 0.12 0.36 4-162 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 016 1 3 .020 .508 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tole...
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor GHz中等功率硅双极晶体管

File Size 47.37K  /  5 Page

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    AT-42085 AT42085

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-42085 AT42085
OCR Text ....24 .46 Ang 16 77 131 -179 -128 RN/50 0.13 0.13 0.12 0.11 0.25 4-172 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 0.015 3.63 0.38 1 BASE 420 45 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are...
Description Up to 6 GHz Medium Power Up to 6 GHz Medium Power

File Size 46.40K  /  5 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. CGY60 Q62702G-39
OCR Text ...0 opt ANG deg 27 39 59 62 RN 47.8 32.7 18.2 15.0 12.01.96 HL EH PD 21 Siemens Aktiengesellschaft pg. 6/7 GaAs MMIC Typical...171 163 154 147 139 132 125 118 110 102 95 87 78 70 62 53 45 37 29 21 14 7 Zo = 50 S12 MAG 0.005 0.0...
Description    GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) 砷化镓微波单片集成电路(低移动通信PCN中的DECT,在2.7VV系统GSM噪声前置放大器)

File Size 38.60K  /  7 Page

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For rn-171 Found Datasheets File :: 186    Search Time::1.328ms    
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