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rdson. Datasheet PDF File

For rdson. Found Datasheets File :: 3716 Search Time::1.921ms
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				IRF[International Rectifier]
Part No.	IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text	...g/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as volta...
Description	200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	123.99K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRLU9343-701 IRLR9343 IRLU9343
OCR Text	...io Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI l 175C Operating Junction Temperature for Ruggedness l Repetitive Avalanche Capabil...
Description	-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package DIGITAL AUDIO MOSFET DIODE MED-FAST BAS116 80VR 250MA 1.25VF@150MA 1.5US TO-236AB -55 150C 数字音频MOSFET
File Size	242.32K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PH3230S PH3230S115
OCR Text	... V s Ptot 62.5 W s ID 100 A s RDSon 3.2 m. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) gate (g) drain (d) g s mb d Simplified outline Symbol ...
Description	N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA N-channel TrenchMOS logic level FET N-channel TrenchMOS⑩ logic level FET
File Size	87.13K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PH3230
OCR Text	...e data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 C Tmb = 25 C Tmb = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 4.5 V; ID = 25 A; Tj = 25 C Typ 3.2 5.5 Max 30 50 42 150 3.7 7.3 Unit V A W C m m drain-source volt...
Description	N-channel enhancement mode field-effect transistor
File Size	94.11K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT
OCR Text	...e data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 C Tj 175 C Tmb = 25 C; VGS = 10 V Tmb = 25 C; VGS = 5 V total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 ...
Description	Turret Lug, for 1.6mm panel thickness 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel TrenchMOS transistor
File Size	112.35K / 14 Page	View it Online	Download Datasheet

				POLYFET[Polyfet RF Devices]
Part No.	SQ701
OCR Text	... SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common S...
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
File Size	34.28K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	TEA1200TS TEA1200TS_1
OCR Text	...l power MOSFETs featuring a low RDSon of approximately 0.1 * Synchronous rectification for high efficiency * Soft start * PWM-only operating option * Stand-alone low battery detector requires no additional supply voltage * Low battery dete...
Description	0.95 V starting DC-to-DC converter with low battery indicator From old datasheet system
File Size	98.12K / 24 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	TEA1202 TEA1202TS
OCR Text	...l power MOSFETs featuring a low RDSon of approximately 0.1 * Synchronous rectification for high efficiency * Soft start * PWM-only operating option * Dropout voltage of 75 mV at 50 mA * Both LDOs are also applicable as low-ohmic power swit...
Description	Battery power unit
File Size	114.38K / 24 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	TEA1204 TEA1204T TEA1204TZN1
OCR Text	...control concept, integrated low RdsON CMOS power switches with low parasitic capacitances and synchronous rectification. VERSION SOT96-1 1998 Mar 02 2 Philips Semiconductors Product specification High efficiency DC/DC conv...
Description	High efficiency DC/DC converter
File Size	108.99K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	TEA1205 TEA1205AT
OCR Text	...control concept, integrated low RdsON CMOS power switches with low parasitic capacitances and synchronous rectification. VERSION SOT96-1 1998 Mar 24 2 Philips Semiconductors Preliminary specification High efficiency DC/DC ...
Description	High efficiency DC/DC converter
File Size	105.91K / 16 Page	View it Online	Download Datasheet

For rdson. Found Datasheets File :: 3716 Search Time::1.921ms
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