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				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	TH562 SD1731 2850
OCR Text	...40% EMITTER Z ATION OUT = 220 W pep WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB ...
Description	RF & Microwave Transistors HF SSB Applications(用于高频单面频带通信的RF和微波晶体管) From old datasheet system
File Size	80.74K / 7 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	THA15 SD1726 2846
OCR Text	...ITTER METALLIZATION OUT = 150 W pep MIN. WITH 14 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1726 BRANDING THA15 PIN CONNECTION DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for ...
Description	RF & Microwave Transistors HF SSB Applications(用于高频单面频带通信的RF和微波晶体管) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS From old datasheet system
File Size	81.64K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	THX15 SD1727
OCR Text	...ITTER METALLIZATION OUT = 150 W pep MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTION DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for ...
Description	HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
File Size	527.58K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	LET9060S
OCR Text	... W POUT = 60 W 10:1 POUT = 60 W pep POUT = 60 W pep POUT = 60 W pep 70 16.7 61 Min. 17 47 -28 Typ. Max. Unit dB % dBc W dB % VSWR VDD = 26 V IDQ = 250 mA POUT = 60 W ALL PHASE ANGLES DYNAMIC (f = 925 - 960 MHz) Symbol P1dB GP D Test ...
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
File Size	294.85K / 10 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF20060RD
OCR Text	...6 volts output power 60 watts (pep) power gain 9 db efficiency 33% intermodulation distortion C30 dbc ? characterized with series equivalent largeCsignal impedance parameters ? sCparameter characterization at high bias levels ? excellen...
Description	MRF20060R, MRF20060RS 2 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistors - Archived
File Size	89.45K / 12 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF20030RD
OCR Text	...ristics output power 30 watts (pep) power gain 9.8 db efficiency 34% intermodulation distortion C28 dbc ? typical 26 volts, 1.88 ghz, class ab, cw characteristics output power 30 watts power gain 11 db efficiency 40% intermodulation ...
Description	MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
File Size	86.39K / 8 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
Part No.	NPTB00004A NPTB00004A-15
OCR Text	...-imd7 +imd7 imd (dbc) p out (w-pep) 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.1 1 10 17ma 25ma 50ma 75ma 100ma gain (db) p out (w-pep) -45 -40 -35 -30 -25 -20 -15 0.1 1 10 17ma 25ma 50ma 75ma 100ma imd (dbc) p out (w-pep) page 7 nptb...
Description	Gallium Nitride 28V, 5W, DC-6 GHz HEMT
File Size	2,231.22K / 10 Page	View it Online	Download Datasheet

				椋???″????浣?涓??)??????
Part No.	MRFE6S9045NR1
OCR Text	...andwidth video bandwidth @ 48 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 10 ? mhz gain flatness in 35 mhz bandwidth @ p out = 10 w av...
Description	RF Power Field Effect Transistor
File Size	569.62K / 15 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLV193
OCR Text	...) 900 900 VCE (V) 12.5 12 12 6 (pep) PL (W) Gp (dB) 6.5 typ. 11 C (%) 50 - - typ. -30 dim (dB) (note 1) halfpage c handbook, halfpage PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter 3 5 b e...
Description	UHF power transistor
File Size	107.99K / 14 Page	View it Online	Download Datasheet

				FREESCALE SEMICONDUCTOR INC
Part No.	MRF21090SR3
OCR Text	... (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10 11.7 ? db drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 750 ma, f1 = 2110.0 mhz, f2 = 2110.1 ...
Description	S BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	383.43K / 8 Page	View it Online	Download Datasheet

For pep Found Datasheets File :: 1340 Search Time::1.828ms
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