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  id-6.7a Datasheet PDF File

For id-6.7a Found Datasheets File :: 2944    Search Time::1.594ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK14UM-9
OCR Text ............................. 0.65 ID ......................................................................................... 14A Integrated ...6 TC = 25C Pulse Test 32 24 1.2 16 ID = 20A 14A 7A 0.8 VGS = 10V 20V 8 ...
Description HIGH-SPEED SWITCHING USE

File Size 51.63K  /  5 Page

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    SSG4957

SeCoS Halbleitertechnologie GmbH
Part No. SSG4957
OCR Text ...nge Tj, Tstg Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 20 -7.7 - 6.1 -30 2 0.016 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) S...
Description Enhancement Mode Power MOSFET

File Size 450.33K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDN359BN
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Parameter Ratings 30 20 (Note 1a) Units ...6 7 5 20 2 14 10 35 4 7 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 2.7 A, 5 ...
Description N-Channel Logic Level PowerTrench TM MOSFET

File Size 90.70K  /  6 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...= -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    SSG4565

SeCoS Halbleitertechnologie GmbH
Part No. SSG4565
OCR Text ...Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings N-Channel P-Channel 40 20 7.6 6 30 2 0.016 Unit V V A A A W W/ C o o -40 _ +20 -6.5 -5.2 -30 Total Power Dissipation Linear Derating Fa...
Description Enhancement Mode Power MOSFET

File Size 506.09K  /  7 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. FK14UM-9
OCR Text ............................. 0.65 ID ......................................................................................... 14A Integrated ...6 TC = 25C Pulse Test 32 24 1.2 16 ID = 20A 14A 7A 0.8 VGS = 10V 20V 8 ...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 57.42K  /  5 Page

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    2SK2383

PANASONIC[Panasonic Semiconductor]
Part No. 2SK2383
OCR Text ...rrent DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 13 26 170 100 3 150 -55 to +150 Unit V V 5.450.3 3.30.3 0.70.1 ...6 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W Input capacitance (Common Sour...
Description Silicon N-Channel Power F-MOS FET

File Size 42.68K  /  3 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS2734
OCR Text ...ax rDS(on) = 122m at VGS = 10V, ID = 2.8A Max rDS(on) = 130m at VGS = 6V, ID = 1.7A Low Miller Charge Optimized efficiency at high frequenci...6 7 8 4G 3S 2S 1S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherw...
Description N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm

File Size 494.46K  /  7 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDMS2672
OCR Text ...Max rDS(on) = 77m at VGS = 10V, ID = 3.7A Max rDS(on) = 88m at VGS = 6V, ID = 3.5A Low Miller Charge RoHS Compliant tm Application DC...6 7 8 4G 3S 2S 1S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherw...
Description N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm

File Size 494.79K  /  7 Page

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    SPA20N60C3 SPB20N60C3 SPI20N60C3 SPP20N60C3

INFINEON[Infineon Technologies AG]
Part No. SPA20N60C3 SPB20N60C3 SPI20N60C3 SPP20N60C3
OCR Text ID 650 0.19 20.7 V A Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best R DS(on) in TO 22...6 cm 2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Electrical Cha...
Description Cool MOS&#153; Power Transistor
Cool MOS& Power Transistor
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 311.60K  /  14 Page

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