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				ON Semiconductor
Part No.	NSBC114EPDP6 NSBC114EPDP6T5G SMUN5311DW1T1G SMUN5311DW1T3G SMUN5311DW1T2G
OCR Text	...n5311dw1 (sot?363) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 c/w ...
Description	Complementary Bias Resistor Transistors
File Size	96.42K / 10 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	15MPA0566
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	11.0-19.0 GHz GaAs MMIC Power Amplifier 11000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
File Size	145.60K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSBA143ZDXV6
OCR Text	...133dw1 (sot ? 363) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 c/w ...
Description	Dual PNP Bias Resistor Transistors
File Size	121.81K / 8 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	15OSC0502
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	921.70K / 5 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	22DSBA0423
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	10.0-40.0 GHz GaAs MMIC Distributed Amplifier
File Size	446.34K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MUN5335DW1T2G SMUN5335DW1T2G
OCR Text	...335dw1 (sot ? 363) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 c/w ...
Description	Complementary Bias Resistor Transistors
File Size	159.48K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSEMP11XV6T1
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 2) 2.9 (note 2) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 2) c/w characteristic (both j...
Description	Common Anode Quad Array Switching Diod
File Size	49.78K / 4 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	26BAM0545
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	20000 MHz - 38000 MHz RF/MICROWAVE TRIPLE BALANCED MIXER 20.0-38.0 GHz GaAs MMIC Balanced Mixer
File Size	104.71K / 5 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	8OSC0464
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator
File Size	272.82K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSBC123TDP6T5G
OCR Text	...23tdp6 (sot ? 963) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 231 269 1.9 2.2 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 540 464 c/w ...
Description	Dual NPN Bias Resistor Transistors
File Size	94.12K / 5 Page	View it Online	Download Datasheet

For heated Found Datasheets File :: 2149 Search Time::2.407ms
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