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  ds-1e Datasheet PDF File

For ds-1e Found Datasheets File :: 1630    Search Time::1.281ms    
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    IRFU3709Z IRFR3709Z IRFR3709ZPBF IRFU3709ZPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU3709Z IRFR3709Z IRFR3709ZPBF IRFU3709ZPBF
OCR Text ... = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 ID= 12A VGS, Gate-to-Source Voltage (V) 5.0 10000 ...1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET Power MOSFET HEXFET功率MOSFET
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 213.39K  /  11 Page

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    IRFU4104 IRFR4104

IRF[International Rectifier]
Part No. IRFU4104 IRFR4104
OCR Text ... = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID= 42A VGS, Gate-to-Source Voltage (V) 4000 16 ...1E-006 1E-005 0.0001 0.001 0.01 0.1 J J 1 1 R1 R1 2 R2 R2 C 2 0.1 Ri (C/W) 0.5067 0.5428 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A)
Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A)
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 178.95K  /  11 Page

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    IRFU4105Z IRFR4105Z

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU4105Z IRFR4105Z
OCR Text ... = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 VGS, Gate-to-Source Voltage (V) ID= 18A VDS= 44V VDS= ...1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Therma...
Description 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET(讥\u003d 55V的,的Rds(on)\u003d 24.5mohm,身份证\u003d 30A条)
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 203.46K  /  11 Page

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    IRLU3802PBF IRLR3802PBF

IRF[International Rectifier]
Part No. IRLU3802PBF IRLR3802PBF
OCR Text ...ED gs gd Crss = C gd Coss =C +C ds gd 12 ID= 6.0A VGS , Gate-to-Source Voltage (V) VDS = 12V 10 8 6 4 2 0 C, Capacitance (pF)...1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effe...
Description HEXFET Power MOSFET

File Size 275.38K  /  10 Page

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    IRLU3802 IRLR3802 IRLR3802PBF IRLU3802PBF IRLR3802TR

IRF[International Rectifier]
Part No. IRLU3802 IRLR3802 IRLR3802PBF IRLU3802PBF IRLR3802TR
OCR Text ...ED gs gd Crss = C gd Coss =C +C ds gd 12 ID= 6.0A VGS , Gate-to-Source Voltage (V) VDS = 12V 10 8 6 4 2 0 C, Capacitance (pF)...1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effe...
Description 12V Single N-Channel HEXFET Power MOSFET in a I-Pak package
12V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 140.42K  /  10 Page

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    STP38N06 3645

STMICROELECTRONICS[STMicroelectronics]
Part No. STP38N06 3645
OCR Text ... s s s s s s V DSS 60 V R DS(on) < 0.03 ID 38 A (*) TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED ...1E -3 -2 Unit nH nH nH nF nF V -1 K 10 DIODE DRAIN GATE (Depletion Capacitance) Symb...
Description N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

File Size 132.70K  /  11 Page

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    STP40N03L-20 4886

ST Microelectronics
STMicroelectronics
Part No. STP40N03L-20 4886
OCR Text ... s s s s s s V DSS 30 V R DS(on) < 0.02 ID 40 A TYPICAL RDS(on) = 0.016 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH...1E -3 -2 Unit nH nH nH nF nF V -1 K 10 DIODE DRAIN GATE (Depletion Capacitance) Symb...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR

File Size 64.40K  /  7 Page

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    TS921 TS921I 5560

STMICROELECTRONICS[STMicroelectronics]
Part No. TS921 TS921I 5560
OCR Text ...NVP 500 501 119 4 19.38 !envoie ds VP, I(VP)=(V119-V4)/2/Ut VP 501 0 0 GCONVN 500 502 119 5 19.38 !envoie ds VN, I(VN)=(V119-V5)/2/Ut VN 502...1E+03 1 E+04 1E+05 Fr e que ncy (Hz) 1E+06 1 E+07 -60 1E+08 EQUIVALENT INPUT NOISE VOLTAGE vs FRE...
Description From old datasheet system
RAIL TO RAIL HIGH OUTPUT CURRENT SINGLE OPERATIONAL AMPLIFIER

File Size 114.52K  /  11 Page

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    TS922 TS922A TS922I 5150

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. TS922 TS922A TS922I 5150
OCR Text ...NVP 500 501 119 4 19.38 !envoie ds VP, I(VP)=(V119-V4)/2/Ut VP 501 0 0 GCONVN 500 502 119 5 19.38 !envoie ds VN, I(VN)=(V119-V5)/2/Ut VN 502...1E+03 1 E+04 1E+05 Fr e que ncy (Hz) 1E+06 1 E+07 -60 1E+08 EQUIVALENT INPUT NOISE VOLTAGE vs FRE...
Description From old datasheet system
RAIL TO RAIL HIGH OUTPUT CURRENT DUAL OPERATIONAL AMPLIFIER
RAIL TO RAIL HIGH OUTPUT CURRENT QUAD OPERATIONAL AMPLIFIER

File Size 115.78K  /  11 Page

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    BUK7518-30

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7518-30
OCR Text ...00 RD S ) (ON =V DS / ID tp = 10 us 100 us 30 10 20 12 VGS / V = 1 ms 10 DC 10 ms 100 ms 10 1 1 10 V...1E-01 20 Tj / C = 25 175 1E-02 2% typ 98% 15 1E-03 10 1E-04 5 1E-05 0 ...
Description TrenchMOS transistor Standard level FET

File Size 43.83K  /  8 Page

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