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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1050
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| OCR Text |
... Power-Added Efficiency
SOURCE bond PAD (2x) DRAIN bond PAD (2X)
FPD1050
GATE bond PAD (1X) DIE SIZE: 470 x 440 m DIE THICKNESS: 100 m bondING PADS: >85 x 60 m
*
DESCRIPTION AND APPLICATIONS
The FPD1050 is an AlGaAs/InGaAs p... |
| Description |
0.75W POWER PHEMT
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| File Size |
174.13K /
2 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1000V
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| OCR Text |
... Plated Source Thru-Vias
DRAIN bond PAD (2X)
FPD1000V
1W POWER PHEMT
GATE bond PAD (2X)
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DESCRIPTION AND APPLICATIONS
DIE SIZE (m): 650 x 800 DIE THICKNESS: 75m bondING PADS (m): >70 x 65
The FPD1000V is a discrete depl... |
| Description |
1W POWER PHEMT
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| File Size |
194.57K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD10000V
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| OCR Text |
...fficiency 18% (8V / 300 mA IDQ) bond PAD bond PAD 39 dBm CW Output Power (16X) (16X) > 48 dBm 3rd Order Intercept Point Plated Source Vias - No Source wirebonds needed 2.5 and 3.5 GHz Evaluation boards available (packaged device) DESCRI... |
| Description |
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
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| File Size |
238.27K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMS2018
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| OCR Text |
...of the die to the centre of the bond pad opening Die Size (m)
1230 x 1250
S T
Die Thickness (m)
100
Min. bond Pad Pitch(m)
88
Min. bond pad opening (m)
70 x 70
2
Preliminary specifications subject to change without notic... |
| Description |
SP7T GaAs Multi-Band GSM UMTS Antenna Switch
SP7T GaAs Multi-Band GSM - UMTS Antenna Switch
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| File Size |
328.37K /
5 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMS2016
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| OCR Text |
...of the die to the centre of the bond pad opening.
Die Size (m)
1230 x 900
Die Thickness (m)
100
Min. bond Pad Pitch(m)
96
Min. bond pad opening (m)
70 x 70
2
Preliminary specifications subject to change without notice Fi... |
| Description |
SP4T GaAs Multi-Band GSM Antenna Switch
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| File Size |
143.76K /
4 Page |
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AD[Analog Devices]
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| Part No. |
EVAL-ADN2843 ADN2843 ADN2843CHIPSET ADN2843CHIPSET-B
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| OCR Text |
...aged with the laser to minimize bond lengths, which improves performance of the optical transmitter. For transmission line applications, contact HSN Application Group at fiberoptic.ic@analog.com. The ADN2844 offers a unique control loop alg... |
| Description |
10.7 Gbps, 3.3V Laser Diode Driver with Dual-loop Control
10.709 Gbps Laser Diode Driver Chipset
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| File Size |
314.10K /
12 Page |
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SKYWORKS[Skyworks Solutions Inc.]
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| Part No. |
DSG9500-000
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| OCR Text |
...ressure so that a metallurgical bond joint between the two occurs. Procedure The beam-lead devices to be bonded should be placed on a clean, hard surface such as a microscope slide. It is recommended that the beam side of the device be down... |
| Description |
Planar Beam Lead PIN Diode
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| File Size |
68.53K /
5 Page |
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United Monolithic Semiconductors GmbH
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA116
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| OCR Text |
...
Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. ... |
| Description |
2-10GHz MESFET Amplifier 2 - 10GHz的场效应管放大器
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| File Size |
160.40K /
4 Page |
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it Online |
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Price and Availability
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