Part Number Hot Search : 
1085CT LCE160 1N112 HYB18T 2SK218 SMC06 W6810IE C3317
Product Description
Full Text Search
  850v Datasheet PDF File

For 850v Found Datasheets File :: 274    Search Time::1.266ms    
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BUV47AFI

Inchange Semiconductor Company Limited
Part No. BUV47AFI
OCR Text ... B 1.6 V mA mA mA VCE= 850v; RBE=10 VCE= 850v; RBE=10;TC=125 Switching Times, Resistive Load ton ts tf Turn-on Time Storage Time Fall Time w w. w sem isc VEB= 5V; IC= 0 VCE= 850v; VBE=-2.5V VCE= 850v; VBE=-2.5V;Tj= ...
Description Silicon NPN Power Transistor

File Size 213.11K  /  2 Page

View it Online

Download Datasheet





    MJH16008

http://
Inchange Semiconductor Company Limited
Part No. MJH16008
OCR Text ...A; IB= 0.5A,TC=100 B B VCEV=850v;VBE(off)=1.5V VCEV=850v;VBE(off)=1.5V;TC=100 VCE= 850v; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 8A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0kHz pF Switching times;Resistive Load td tr ts tf Delay Time Rise Ti...
Description isc Silicon NPN Power Transistor

File Size 77.18K  /  2 Page

View it Online

Download Datasheet

    MJ16006

Inchange Semiconductor Company Limited
Part No. MJ16006
OCR Text ...ollector cutoff current v cev =850v;v be (off) =1.5v v cev =850v;v be (off) =1.5v;t c =100 0.25 1.5 ma i cer collector cutoff current v ce = 850v; r be = 50 ,t c = 100 2.5 ma i ebo emitter cutoff current v eb = 6v; i c ...
Description isc Silicon NPN Power Transistor

File Size 105.29K  /  2 Page

View it Online

Download Datasheet

    MJ12021

Inchange Semiconductor Company Limited
Part No. MJ12021
OCR Text ...mA IC= 5A; IB= 1A B VCEV=850v;VBE(off)=1.5V VCEV=850v;VBE(off)=1.5V;TC=100 VCE= 850v; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 8A ; VCE= 5V IC= 1A; VCE= 10V; ftest=1MHz IE= 0; VCB= 10V; ftest=1kHz MHz pF Switching times;Inductive Load...
Description isc Silicon NPN Power Transistor

File Size 51.22K  /  2 Page

View it Online

Download Datasheet

    MJ12020

Inchange Semiconductor Company Limited
Part No. MJ12020
OCR Text ... IC= 3A; IB= 0.6A B VCEV=850v;VBE(off)=1.5V VCEV=850v;VBE(off)=1.5V;TC=100 VCE= 850v; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 5A ; VCE= 5V IC= 0.3A; VCE= 10V; ftest=1MHz IE= 0; VCB= 10V; ftest=1kHz MHz pF Switching times;Inductive Lo...
Description isc Silicon NPN Power Transistor

File Size 51.22K  /  2 Page

View it Online

Download Datasheet

    CM800HA-34H

Mitsubishi Electric Semiconductor
Part No. CM800HA-34H
OCR Text ...= 125C VCE = 10V VGE = 0V VCC = 850v, IC = 800A, VGE = 15V VCC = 850v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case,...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 56.45K  /  4 Page

View it Online

Download Datasheet

    CM1800HC-34N CM1800HC-34N09

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. CM1800HC-34N CM1800HC-34N09
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 850v, IC = 1800A, VGE = 15V, Tj = 25C IE = 1800A, VGE = 0V, Tj = 25C (Note 4) IE = 1800A, VGE = 0V, Tj = 125C (Note 4) VCC = 850v, IC = 1800A, VGE = 15V RG(on) = 0.9, Tj = 125C, Ls = 100nH Inductive load VCC ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 56.13K  /  6 Page

View it Online

Download Datasheet

    CM1800HC-34H05 CM1800HC-34H09 CM1800HC-34H

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. CM1800HC-34H05 CM1800HC-34H09 CM1800HC-34H
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 850v, IC = 1800A, VGE = 15V, Tj = 25C IE = 1800A, VGE = 0V, Tj = 25C (Note 4) IE = 1800A, VGE = 0V, Tj = 125C (Note 4) VCC = 850v, IC = 1800A, VGE = 15V RG(on) = 0.3, Tj = 125C, Ls = 80nH Inductive load VCC =...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 64.03K  /  6 Page

View it Online

Download Datasheet

    CM1200HC-34H

Mitsubishi Electric Semiconductor
Part No. CM1200HC-34H
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 850v, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 850v, IC = 1200A, VGE = 15V RG(on) = 2, Tj = 125C, Ls = 100nH Inductive load VCC = ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 61.96K  /  6 Page

View it Online

Download Datasheet

    CM1200DB-34N

Mitsubishi Electric Semiconductor
Part No. CM1200DB-34N
OCR Text ...100kHz VGE = 0V, Tj = 25C VCC = 850v, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 850v, IC = 1200A, VGE = 15V RG(on) = 1.3, Tj = 125C, Ls = 150nH Inductive load VCC ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 58.25K  /  6 Page

View it Online

Download Datasheet

For 850v Found Datasheets File :: 274    Search Time::1.266ms    
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 850v

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.36017394065857