7-12ghz pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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7-12ghz Datasheet PDF File

For 7-12ghz Found Datasheets File :: 350 Search Time::3.984ms
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				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor Mitsubishi Electric, Corp.
Part No.	MGF4714CP 4714CP
OCR Text	...=25C VDS=2V GS 12 1.0 0.9 0.8 0.7 0.6 0.5 NF 11 10 14 13 0 5 10 15 20 25 30 ID (mA) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT S PARAMETERS Freq. (GHz) ...
Description	From old datasheet system PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管
File Size	16.89K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFA072ANBSP EFA072A
OCR Text	... 22.5 8.0 TYP 25.0 25.0 10.0 7.5 32 MAX UNIT dBm dB % 120 80 190 110 -2.0 270 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) ...
Description	Low Distortion GaAs Power FET
File Size	42.48K / 2 Page	View it Online	Download Datasheet

				RF MICRO DEVICES INC
Part No.	FPD7612-000SQ
OCR Text	...-5v pinch-off voltage (v p ) \|0.7\| \|1.0\| \|1.3\| v v ds =1.3v, i ds =0.2ma gate-source breakdown voltage (v bdgs ) \|12.0\| \|14.0\| v i gs =0.2m...12ghz using cw signal. 2 of 4 ds100601 7628 thorndike road, greensboro, nc 27409-9421 for sales ...
Description	X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
File Size	321.26K / 4 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] N.A.
Part No.	FHX04LG FHX05LG FHX06LG
OCR Text	...9.5 Limit Typ. Max. 30 60 45 -0.7 0.75 10.5 0.9 10.5 1.1 10.5 300 -1.5 0.85 1.1 1.35 400 Unit mA mS V V dB dB dB dB dB dB C/W VDS = 2V, IDS = 10mA, f = 12GHz Channel to Case Note: RF parameters are measured on a sample basis as fol...
Description	Super Low Noise HEMT
File Size	111.86K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1951A-01 MGF1951A 1951A
OCR Text	...5dBm, f=12GHz MIN -8 35 -0.3 11 7 TYP -15 60 -1.4 13 9 MAX -- 120 -3.5 -- -- Unit V mA V dBm dB V(BR)GDO Gate to Drain Breakdown Voltage MITSUBISHI (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR <GaAs FET> PRELIMINARY MGF1951 MGF1...
Description	Medium Power Microwave MESFET
File Size	28.00K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FHX13LG FHX14LG
OCR Text	... Limit Typ. Max. 30 60 50 -0.7 -1.5 0.45 13.0 0.55 13.0 300 0.50 0.60 400 Unit mA mS V V dB dB dB dB C/W FHX13LG 1200 1201 3201 ...12GHz VDS=2V 14 Gas Associated Gain (dB) 13 12 11 10 1 5 Drain Current (mA) NF & Gas vs....
Description	Super Low Noise HEMT
File Size	84.72K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor
Part No.	EPA160A
OCR Text	...e breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 30 o c/w maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-sour...
Description	8-12V high efficiency heterojunction power FET
File Size	27.42K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG MGF431XGSERIES
OCR Text	... ID=10mA ) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Magn. 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.682 0.670 0.639 0.617 0.591 0.571 0.565 0.560 0.533 0.484 S11 Angle -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 ...
Description	Super Low Noise InGaAs HEMT From old datasheet system
File Size	32.55K / 3 Page	View it Online	Download Datasheet

For 7-12ghz Found Datasheets File :: 350 Search Time::3.984ms
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