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6a 400v Datasheet PDF File

For 6a 400v Found Datasheets File :: 1140 Search Time::1.187ms
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				NTE Electronics, Inc. NTE[NTE Electronics]
Part No.	NTE2976
OCR Text	.... . . . . . . . . . . . . . . . 6a Peak (Pulse Width 10s, Duty Cycle 1/100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...400v, VGS = 10V, ID = 6a VDS = 10V, VGS = 0V, f = 1MHz .402 (10.2) Max .224 (5.7) Max .122 (3.1) ...
Description	Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125 MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.46K / 2 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	T0605MH T0609MH T0605XH 3473 T0609XH T0605DH T0605NH T0605SH T0609DH T0609NH T0609SH
OCR Text	6a VDRM = 400v to 800V IGT 5mA to 10mA A1 A2 G DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. ...
Description	From old datasheet system SENSITIVE GATE TRIACS
File Size	61.08K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP350LC
OCR Text	... = 1mA 0.30 VGS = 10V, I D = 9.6a 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 9.6a 25 VDS = 400v, VGS = 0V A 250 VDS = 320V, VGS = 0V, T J = 125C 100 VGS = 20V nA -100 VGS = -20V 76 ID = 16a 20 nC VDS = 320V 37 VGS = 10V, See Fig. 6 a...
Description	Power MOSFET(Vdss=400v, Rds(on)=0.30ohm, Id=16a) 功率MOSFET（减振钢板基本\u003d00V，的Rdson）\u003d 0.30ohm，身份证\u003d 16a条）
File Size	292.30K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFP460N IRFP460NPBF
OCR Text	...R IV E R 600 ID 8.9A 12.6a BOTTOM 20A TOP RG 20V tp D .U .T IA S + V - DD 450 A 0 .0 1 300 Fig 12a. Unclamped Inductive Test Circuit 150 V (B R )D SS tp 0 25 50 75 100 125 150 Starting TJ , Junc...
Description	Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）最大值\u003d 0.24ohm，身份证\u003d 20A条） 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	92.47K / 8 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric] Sanken Electric Co.,Ltd.
Part No.	STA203A
OCR Text	... RGK=, Tj=25C Pulse test, ITM=1.6a T2 , G + + - - + - Gate trigger voltage VGT V VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G + + - - - + + - T2 , G mA VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G V mA C/W VD=1/2xVDRM, Tj=1...
Description	1.2A 3 circuits Triac Array 0.5mm Pitch DIL Vertical SMT Female Assembly, 1.5mm height, location pegs, hold-down tabs, tin, 32 32-way, Tape & Reel packing
File Size	54.52K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB02N60 SKP02N60
OCR Text	...IC, COLLECTOR CURRENT 10A 8A 6a T C =110C 4A 2A 0A 10Hz T C =80C IC, COLLECTOR CURRENT 15 s 1A 50 s 200 s 0.1A 1ms DC Ic 0.0...400v, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	392.65K / 13 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CR02AM-4 CR02AM CR02AM-6 CR02AM-8
OCR Text	...M applied, RGK=1k Ta=25C, ITM=0.6a, instantaneous value Ta=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1k Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- --...
Description	0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	65.68K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CR02AM-8 CR02AM-8A
OCR Text	...M applied, RGK=1k Tc=25C, ITM=0.6a, instantaneous value Tj=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1 Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- -- ...
Description	LOW POWER USE GLASS PASSIVATION TYPE
File Size	63.21K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CR02AM CR02 CR02AM-6aB CR02AM-4CA CR02AM-4AB
OCR Text	...M applied, RGK=1k Ta=25C, ITM=0.6a, instantaneous value Ta=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1k Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- --...
Description	SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE
File Size	63.07K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor International Rectifier
Part No.	IRFD224
OCR Text	...A 1.5 -- -- S VDS = 50V, ID = 2.6a -- -- 25 VDS = 400v, VGS = 0V A -- -- 250 VDS = 320V, VGS = 0V, TJ = 125C -- -- 100 VGS = 20V nA -- -- -100 VGS = -20V -- -- 14 ID = 4.4A -- -- 2.7 nC VDS = 200V -- -- 7.8 VGS = 10V, See Fig. 6 and 13 -- 7...
Description	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=0.63A)
File Size	421.65K / 8 Page	View it Online	Download Datasheet

For 6a 400v Found Datasheets File :: 1140 Search Time::1.187ms
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