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ST Microelectronics
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| Part No. |
NAND01G-M NAND256-M
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| OCR Text |
528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
Multi-Chip Packages - 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM - 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash... |
| Description |
(NANDxxx-M) NAND Flash Memories
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| File Size |
217.51K /
23 Page |
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Samsung Electronics
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| Part No. |
K5D5657ACM-F015
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| OCR Text |
...banks. In 256Mbit NAND Flash, a 528-byte page program can be typically achieved within 200us and an 16K-Byte block erase can be typically achieved within 2ms. In serial read operation, a byte can be read by 50ns. DQ pins serve as the ports ... |
| Description |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
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| File Size |
1,313.17K /
74 Page |
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ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
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| Part No. |
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB1 NAND01GR3A2AZB6 NAND01GR3A2AZB1 NAND512-A NAND512R3A0AN1 NAND512R3A0AN6 NAND512R3A0AV1 NAND512R3A0AV6 NAND01GR3A0AZA6 NAND01GR3A0AN1 NAND01GR3A0AZB1 NAND01GW4A0AV1 NAND01GW4A0AN6 NAND01GW4A0AN1 NAND01GW4A0AV6 NAND512W3A0AZB6 NAND01GR3A2AZA1 NAND01GR3A2AZA6 NAND256R3A0AZA1 NAND01GR4A2AZB6 NAND01GR4A0AZA6 NAND128-A NAND512R3A0AZB6 NAND512R3A0AZA1 NAND512W4A0AV6 NAND512W4A0AV1 -NAND128R3A0AN1 -NAND128R3A0AZB6 -NAND128-A -NAND512-A -NAND512R3A0AN1 -NAND512R3A0AN6 NAND01GR3A0BZB1E NAND128R4A0BN6F NAND512W3A2AZB1E NAND01GR4A2CN1E NAND01GW3A0CN1F NAND128W4A2BV6T NAND512W4A2BV6T NAND512W4A2CZB1T NAND512R4A0BV1E NAND512W3A2AZB6E NAND01GR3A0BV1F NAND01GR4A0BV1F NAND01GW3A2BV1F NAND01GW4A2BV1F NAND01GW3A0BV1F NAND01GR3A2BV1F NAND01GR4A2BV1F NAND128W4A0BV1F NAND256R3A2BV1F NAND256R4A0BV1F NAND256R4A2BV1F NAND256W3A0BV1F NAND256W3A2BV1F NAND256W4A0BV1F NAND256W4A2BV1F NAND512R4A2BV1F NAND01GW4A0BV1F NAND256R3A0BV1F NAND512R4A0BV1F NAND512W3A0BV1F NAND128R3A0BV1F NAND128R3A2BV1F NAND128R4A0BV1F NAND128R4A2BV1F NAND128W3A0BV1F NAND128W3A2BV1F NAND128W4A2BV1F NAND512R3A0BV1F NAND512R3A2BV1F NAND512R4A0BV1T NAND128R3A0BN1E NAND128W3A0AV1T NAND128R
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| OCR Text |
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - - - Up to 1 Gbit memory array Up to 32 Mbit spare area Cost effective solutions for mass storage applications x8 or x16 bus width... |
| Description |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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| File Size |
434.47K /
57 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F1208Q0A-XXB0
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| OCR Text |
...erformed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle ti... |
| Description |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
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| File Size |
819.47K /
45 Page |
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it Online |
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