| |
|
 |
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| Part No. |
APT10021JFLL_04 APT10021JFLL APT10021JFLL04
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 37A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 37A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @...5a
D
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, T... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
| File Size |
151.86K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| Part No. |
APT10021JLL_04 APT10021JLL APT10021JLL04
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 37A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 37A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @...5a
D
140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, T... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
| File Size |
151.08K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT10030L2VFR_04 APT10030L2VFR APT10030L2VFR04
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 33A @ 25C VGS = 15V VDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 585 55 2...5a
1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 VGS, G... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
129.11K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT10030L2VR_04 APT10030L2VR APT10030L2VR04
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 33A @ 25C VGS = 15V VDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 585 55 2...5a
1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80
TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 VGS, G... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
| File Size |
128.30K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| Part No. |
APT10045JFLL_03 APT10045JFLL APT10045JFLL03
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @...5a
1.30 1.20 VGS=10V
1.10
1.00
VGS=20V
TJ = +125C TJ = +25C
TJ = -55C
0.90 0.80... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
| File Size |
91.20K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT10045JLL_03 APT10045JLL APT10045JLL03
|
| OCR Text |
...= 25V f = 1 MHz VGS = 10V VDD = 500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @...5a
1.30 1.20 VGS=10V
1.10
1.00
VGS=20V
TJ = +125C TJ = +25C
TJ = -55C
0.90 0.80... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
| File Size |
91.05K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor Corporation
|
| Part No. |
FDA16N50F109
|
| OCR Text |
500v n-channel mosfet april 2007 unifet tm fda16n50 500v n-channel mosfet features ? 16.5a, 500v, r ds(on) = 0.38 @v gs = 10 v ? low gate charge ( typical 32 nc) ?low c rss ( typical 20 pf) ?fast switching ? 100% avalanche tested ? im... |
| Description |
500v N-Channel MOSFET
|
| File Size |
298.84K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
