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  25v 1.5a Datasheet PDF File

For 25v 1.5a Found Datasheets File :: 10033    Search Time::1.594ms    
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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...nsconductance -- 72 -- S VCE = 25v, I C = 50A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- 10 VGE = 0V, VCE = 1200V, TJ = 125C Diode Forward Voltage - Maximum -- 2.9 4.1 V IF = 50A, VGE = 0V -- 2.7 -- IF = ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...sconductance -- 107 -- S VCE = 25v, IC = 75A ICES Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- 10 VGE = 0V, VCE = 1200V, TJ = 125C VFM Diode Forward Voltage - Maximum -- 2.3 3.3 V IF = 75A, V GE = 0V -- 2.1...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25v TOP 100 ID , Drain-to-Source Current (A) 10 ID , Drain-to-Source Current (A) 10 VGS 7.0V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25v TOP 2.25v 1 2.25v 1 20s PULSE WIDTH Tj = 25...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...TEST CONDITIONS VGS = 0V, VDS = 25v, f = 1.0MHz, (Figure 11) MIN - TYP 600 180 52 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Therma Resistance Junction to Case Therma Resistance Ju...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...DS = 10V, ID = 250A --- S VDS = 25v, ID = 104A 20 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V ...1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 44V, = 1.0MHz --- VGS = ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...S = 10V --- VGS = 0V --- VDS = 25v --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 240V, = 1.0MHz --- VGS = 0V, VDS = 0V to 240V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Aval...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...ntact --- VGS = 0V --- pF VDS = 25v --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward V...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...ntact --- VGS = 0V --- pF VDS = 25v --- = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 150 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RD...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...0 --- VGS = 0V 160 --- pF VDS = 25v 88 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward V...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ... = 20V VGS = -20V VGS = 0 VDS = 25v f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 8A VDS = 0.5BVDSS VDD = 50V ID = 8A RG = 7.5W ID = 8A ID = 5A ID ...1 0.35 0.4 2 3 25 250 100 -100 860 350 125 12.5 1.0 2 29 6.3 27 60 140 140 140 8 32 4 V / C W ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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For 25v 1.5a Found Datasheets File :: 10033    Search Time::1.594ms    
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