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DE3L20U 04PC20I 20E05 16F84 MCH3401 24C10 6364PU 13N65
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  20v- Datasheet PDF File

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    Kersemi Electronic Co., Ltd.
Part No. IRFZ48VPBF
OCR Text ...ard leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 110 i d = 72a q gs gate-to-source charge ??? ??? 29 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 3...
Description Advanced Process Technology

File Size 3,101.83K  /  8 Page

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    DMN21D2UFB DMN21D2UFB-7B

Diodes Incorporated
Part No. DMN21D2UFB DMN21D2UFB-7B
OCR Text ...ation advance information 20v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25c 20v 0.99? @ v gs = 4.5v 760ma 1.2? @ v gs = 2.5v 700ma 2.4? @ v gs = 1.8v 500ma 3.0?...
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 208.96K  /  6 Page

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    MTA55N02N3

Cystech Electonics Corp.
Part No. MTA55N02N3
OCR Text ...3 cystek product specification 20v n-channel enhancement mode mosfet mta55n02n3 bv dss 20v i d 3.6a 29m (typ.) r dson(max) @v gs =4.5v, i d =3.6a 39m (typ.) r dson(max) @v gs =2.5v, i d =3.1a features ? simple drive requi...
Description 20V N-CHANNEL Enhancement Mode MOSFET

File Size 261.35K  /  8 Page

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    IRFZ48VPBF

International Rectifier
Part No. IRFZ48VPBF
OCR Text ...ard leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 110 i d = 72a q gs gate-to-source charge ??? ??? 29 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 3...
Description Advanced Process Technology

File Size 212.27K  /  8 Page

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    PCHMB75E6

Nihon Inter Electronics Corporation
Part No. PCHMB75E6
OCR Text ...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 75ma . . ...
Description IGBT Module-Chopper

File Size 240.41K  /  4 Page

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    S81-125 S84Z-401 S84A-410 S84-11 S84Z-90 S84A-310

List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Part No. S81-125 S84Z-401 S84A-410 S84-11 S84Z-90 S84A-310
OCR Text ...rating line load s84-11 20v to 25v 60hz 40 va 0 leads screw terminals s84z-90 20/208/240v to 25v 60hz 40 va 0 leads screw terminals universal mounted types (plate, foot or hub mount) model primary to output ...
Description CLASS 2 TRANSFORMERS ?ENERGY LIMITING

File Size 498.01K  /  2 Page

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    AP60T03GH-HF14

Advanced Power Electronics Corp.
Part No. AP60T03GH-HF14
OCR Text ...ss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =20a - 12 20 nc q gs gate-source charge v ds =20v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc q oss output charge v dd =15v,v gs =0v -...
Description Simple Drive Requirement

File Size 95.53K  /  4 Page

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    SSDF9504 SSDF9504-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSDF9504 SSDF9504-15
OCR Text ... i d = -8a n-ch - - 100 v gs = 20v gate-source leakage current p-ch i gss - - 100 na v gs = 20v n-ch - - 1 v ds =32v, v gs =0, t j =25c p-ch - - -1 v ds = -32v, v gs =0, t j =25c n-ch - - 5 v ds =32v, v gs =0, t j =55c drain-...
Description N And P-Channel Enhancement Mode Power MOSFET

File Size 746.53K  /  7 Page

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    SPN2302W SPN2302WS23RG SPN2302WS23RGB

SYNC POWER Crop.
Part No. SPN2302W SPN2302WS23RG SPN2302WS23RGB
OCR Text ...t-23) part marking 20v/3.6a,r ds(on) = 97m ? @v gs =4.5v 20v/3.1a,r ds(on) = 113m ? @v gs =2.5v super high density cell design for extremely low r ds (on) exceptional on-resistance and maximum dc current capab...
Description N-Channel Enhancement Mode MOSFET

File Size 176.85K  /  8 Page

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Part No. JANSG2N7469U2
OCR Text ...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 160 v gs =12v, i d = 45a q gs gate-to-source charge ? ? 55 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 65...
Description 75 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 127.64K  /  8 Page

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