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  0.5-20ghz Datasheet PDF File

For 0.5-20ghz Found Datasheets File :: 261    Search Time::3.062ms    
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    CHA3093C CHA3093C99F_00 CHA3093C99F/00

UMS[United Monolithic Semiconductors]
Part No. CHA3093C CHA3093C99F_00 CHA3093C99F/00
OCR Text ...actured with a PM-HEMT process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 50 18 20 20 22 dB dB dBm dBm IP3 PAE VSWRin VSWRout NF Vdet 3 order intercept point Power...
Description 20-40GHz Medium Power Amplifier

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    FMPA2151

Fairchild Semiconductor
Part No. FMPA2151
OCR Text ...ask Compliance 3 Min 2.4 3.0 2.6 Typ 3.3 3.0 0.1 31 170 3.5 850 230 +20 Max 2.5 3.6 3.6 Units GHz V V mA dB mA % mV mV dBm Notes: 1. VCC=3.3V, PA ON 2.4=3.3V, TA=25C, PA is constantly biased, 503/4 system. 2. Percentage ...
Description 2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)

File Size 80.55K  /  6 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX3930EVKIT
OCR Text 0; 6/01 MAX3930 Evaluation Kit General Description The MAX3930 evaluation kit (EV kit) is an assembled demonstration board that provide...5 1% resistors (0402) Note: R7 and R8 will be installed with resistive material facing down on the c...
Description From old datasheet system
Evaluation Kit for the MAX3930

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC45V3642A C453642A
OCR Text ...reliability. OUTLINE 24 +/- 0.3 2 N . I 0 M 2 / + 4 . 7 1 N I M 2 4 . 0 / + 3 . 4 2 . 0 -R1.2 / + 0 . 8 unit : mm FEATURES Class ...5 0 . 0 / + 1 . 0 2 . 0 / + 4 . 2 APPLICATION item 01 : 3.6 - 4.2 GHz band power amplifier it...
Description 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system

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    PHILIPS[Philips Semiconductors]
Part No. SA9500 SA9500DH
OCR Text ...tage (VCC) Logic input voltage -0.3 to +6.0 -0.3 to VCC+0.3 +20 800 150 Maximum power input dBm mW C C Power dissipation, Tamb=25C Storage t...5 mA 20.0 mA 24 mA 20.2 mA 11 mA 7.7 mA 12 A MAXIMUM CURRENT CONSUMPTION 30.6 mA 24.3 mA 26.5 mA 22....
Description Dual-band / CDMA/AMPS downconverter IC
Dual-band, CDMA/AMPS downconverter IC

File Size 140.99K  /  22 Page

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    NBB-402 NBB-402-T3 NBB-X-K1 NBB-402-E NBB-402-T1

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
http://
Part No. NBB-402 NBB-402-T3 NBB-X-K1 NBB-402-E NBB-402-T1
OCR Text 0 Typical Applications * Narrow and Broadband Commercial and Military Radio Designs * Linear and Saturated Amplifiers Product Description ...5 9 4 RF IN 2 3 Ground Ordering Information Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz ...
Description Cascadable Broadband GaAs MMIC Amplifier DC to 8 GHz
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz
From old datasheet system

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    CHR2292 CHR2292-99F_00

United Monolithic Semiconductors
Part No. CHR2292 CHR2292-99F_00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 0.25 13 20 10 1.5 GHz GHz GHz dB ESD Protection : Electrostatic discharge sensitive devic...
Description 17-20GHz Integrated Down Converter

File Size 123.14K  /  6 Page

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    TGA1135B-SCC

TriQuint Semiconductor
Part No. TGA1135B-SCC
OCR Text 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 480 m...5 31 30.5 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Note...
Description 18-27 GHz 1W Power Amplifier

File Size 1,098.50K  /  10 Page

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    PE3 SVC6310

MA-Com
Tyco Electronics
Part No. PE3 SVC6310
OCR Text 0.5 m MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging PE3 V2.00 Typical RF Performance FC06 (6X150) 900 um FET Pa...
Description 25-1000 MHz, GaAs foundry service PROCESS PE3
GAAS FOUNDRY SERVICES PROCESS PE3
GaAs Foundry Services PROCESS PE3

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    CHA2092B99F_00 CHA2092B CHA2092B99F/00

United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
Part No. CHA2092B99F_00 CHA2092B CHA2092B99F/00
OCR Text ...factured with a P-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 0 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) Main Characteristics Tamb. = 25C Symbol Fo...
Description 18-32GHz Low Noise Amplifier 182GHz低噪声放大器

File Size 85.95K  /  6 Page

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