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  0-400v Datasheet PDF File

For 0-400v Found Datasheets File :: 14953    Search Time::1.828ms    
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    Alpha & Omega Semiconductor
Part No. AOK30B60D
OCR Text ...llector-emitter voltage 600 c/w 0.95 maximum diode junction-to-case c/w 0.45 maximum igbt junction-to-case g c e top view aok30b60d to-247 ...400v, r g =25 total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characterist...
Description IGBT with Anti-Parallel Diode IGBTs

File Size 706.01K  /  9 Page

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    APT15DS60S

Advanced Power Technology
Part No. APT15DS60S
OCR Text ...Current (TC = 77C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Oper...400V, TC = 125C IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C 13 14 12 1.5 31 85 4.7 20 160 18 -...
Description MOSFET

File Size 115.16K  /  4 Page

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    APT30GS60BRDL APT30GS60BRDLG

Microsemi Corporation
Part No. APT30GS60BRDL APT30GS60BRDLG
OCR Text ...) Package Weight IGBT Diode -55 0.11 0.22 5.9 Min Typ Max 250 0.50 1.0 150 300 C oz g 11-2008 052-6353 Rev B Unit W C/W CAUTION: Thes...400V Typ 18 1600 140 90 130 95 VGE = 0 to 15V IC = 30A, VCE = 300V Inductive Switching IGBT and Diod...
Description Resonant Mode Combi IGBT

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    Alpha & Omega Semiconductor
Part No. AOK30B60D1
OCR Text ...imum diode junction-to-case c/w 0.6 maximum igbt junction-to-case g c e top view aok30b60d1 to-247 g c e rev.3.0: nov 2013 www.ao...400v, r g =25 total gate charge gate resistance f=1mhz electrical characteristics (t j =25c unless...
Description IGBT with Anti-Parallel Diode IGBTs

File Size 710.23K  /  9 Page

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    Sanyo Semiconductor Corporation
Part No. C3752
OCR Text ...O hFE1 hFE2 fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.2A VCE=5V, IC=1A VCE=10V, IC=0.2A VCB=10V, f=1MHz 10* 8 15 60 MHz pF Conditions ...400V, 5IB1=-2.5IB2=IC=2A, RL=200 tstg VCC=400V, 5IB1=-2.5IB2=IC=2A, RL=200 tf VCC=400V, 5IB1=-2.5IB2...
Description Search --To 2SC3752

File Size 124.64K  /  4 Page

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    Infineon
Part No. G50N60HS
OCR Text ...r current TC = 25C TC = 100C 0.88mJ 150C G50N60HS Symbol VCE IC Value 600 100 50 Unit V A Pulsed collector current, tp limited b...400V, VGE = 0/+15V, RG = 6.8) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description Search --To SGW50N60HS

File Size 863.62K  /  11 Page

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    Alpha & Omega Semiconductor
Part No. AOTF5B65M2
OCR Text ... aotf5b65m2 rev.1.0: february 2016 www.aosmd.com page 1 of 9 downloaded from: http:/// symbol min typ...400v diode reverse recovery chargediode peak reverse recovery current turn-on delaytime t j =150c v ...
Description IGBT with Anti-Parallel Diode IGBTs

File Size 563.84K  /  9 Page

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    IRGSL4062DPBF IRGS4062DPBF

International Rectifier
Part No. IRGSL4062DPBF IRGS4062DPBF
OCR Text ...g Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Max. 600 48 24 96 96 48 24 96 20 30 250 125 -55 to +175 Units V c d ...400V Conditions Ref.Fig 24 CT1 IC = 24A, VCC = 400V, VGE = 15V RG = 10, L = 200H, LS = 150n...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 459.75K  /  12 Page

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    Alpha & Omega Semiconductor
Part No. AOTF5B60D
OCR Text ...b60d to-220f g c e rev.3.0: jan 2014 www.aosmd.com page 1 of 9 downloaded from: http:/// aotf5b60d symbol min...400v, r g =60 total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characterist...
Description IGBT with Anti-Parallel Diode IGBTs

File Size 739.61K  /  9 Page

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    TLP741G

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TLP741G
OCR Text ...e "option (D4)" TOSHIBA Weight: 0.35 g 11-7B1 Unit in mm * * Pin Configuration (top view) 7.62mm pich standard type * Creepage dist...400V RGK = 27k VKA = 400V RGK = 27k ITM = 100mA RGK = 27k VD = 280V, RGK = 27k V = 0, f = 1MHz Anode...
Description TOSHIBA Photocoupler GaAs Ired & Photo&#8722;Thyristor
TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor

File Size 502.72K  /  6 Page

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