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  -900v Datasheet PDF File

For -900v Found Datasheets File :: 1633    Search Time::0.797ms    
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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
OCR Text 900V High Speed PT IGBT (R) E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TSO VCE(ON) tradeof...
Description High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT

File Size 235.94K  /  9 Page

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    6MBI450U-170

List of Unclassifed Manufacturers
ETC
Part No. 6MBI450U-170
OCR Text ...25C VCE=10V, VGE=0V, f=1MHz VCC=900V IC=450A VGE=15V RG=1.1 VGE=0V IF=450A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.50 - 2.85 - 2.05 - 2.40 - 45 - 0.58 - 0.32 - 0.10 - 0.80 - 0.15 - 2.25 - 2.45 - 1.80 - 2...
Description IGBT Module U-Series

File Size 136.36K  /  5 Page

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    APTGT400U170D4G

Microsemi Corporation
Part No. APTGT400U170D4G
OCR Text ...V f = 1MHz VGE=15V, IC=400A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 400A RG = 3.6 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 400A RG = 3.6 VGE = 15V Tj = 125C VBus = 900V IC = 400A Tj = 125C RG = 3.6 VGE 15V...
Description Single switch Trench Field Stop IGBT Power Module

File Size 196.04K  /  5 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text 900V - 2.1 - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5 < 2.5 ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1 EXTREMELY HIGH dv/dt AND CAPA...
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 514.47K  /  13 Page

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    Semelab
Part No. BUX33B BUX33A
OCR Text ... http://www.semelab.co.uk 800v 900v 1000v 800v 900v 1000v 450v 500v 550v 400v 450v 500v 8v 12a 15a 4 150w ?65 to 200c semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. informa...
Description HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS

File Size 50.19K  /  4 Page

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    M3SPD

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. M3SPD
OCR Text ...y) max. clamping voltage: 900v (phase / neutral) (with current waveform 1300v (phase / earth) 1.2 / 50 m s - short circuit current 100a 10a) transient withstand capacity: x 5 @ 5ka (phase / neutral) x 3 @ 5...
Description CONNECTION DIAGRAM DIAGRAMME DE CONNECTION SCHALTBILDANSCHLUSS

File Size 175.73K  /  1 Page

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    FZ800R17KF6CB2

eupec GmbH
Part No. FZ800R17KF6CB2
OCR Text ...nductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C VGE = 15V, RG = 1,8, Tvj = 125...
Description IGBT-Modules

File Size 114.93K  /  9 Page

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    FZ1600R17KF6C

eupec GmbH
Part No. FZ1600R17KF6C
OCR Text ...uctive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 1...
Description IGBT-Modules

File Size 149.20K  /  9 Page

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    FF200R17KE3

eupec GmbH
Part No. FF200R17KE3
OCR Text ...inductive load) IC =200A, VCE = 900V VGE = 15V, RG = 6,8W, Tvj = 25C VGE = 15V, RG = 6,8W, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 6,8W, Tvj = 25C VGE = 15V, RG = 6,8W, Tvj =...
Description IGBT-Modules

File Size 250.53K  /  9 Page

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