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CDIL[Continental Device India Limited]
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Part No. |
CSD882P CSD882R CSD882 CSD882E CSD882Q
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Description |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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File Size |
133.82K /
3 Page |
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Download Datasheet |
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CDIL[Continental Device India Limited]
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Part No. |
CSB772P CSB772R CSB772 CSB772E CSB772Q
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Description |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
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File Size |
132.88K /
3 Page |
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it Online |
Download Datasheet |
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Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
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Part No. |
HF50-12F
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Description |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,vceo: 18 V,Vebo: 3.5 V))
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File Size |
17.42K /
1 Page |
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it Online |
Download Datasheet |
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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Part No. |
ASI10652 TVU150
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Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,vceo: 60 V,Vebo: 3.5 V))
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File Size |
17.88K /
1 Page |
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it Online |
Download Datasheet |
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Continental Device India Limited
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Part No. |
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9011I CD9011J
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Description |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 29 - 273 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 29 - 44 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 40 - 59 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 54 - 80 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 72 - 108 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 97 - 146 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 132 - 198 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V vceo, 0.100A Ic, 182 - 273 hFE
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File Size |
85.83K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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