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UTC[Unisonic Technologies]
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| Part No. |
MJD210
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| OCR Text |
transistor
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications.
FEATURE
*Collector-Emitter Sustaining Voltage VCEO(sus) =25V (Min) @... |
| Description |
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
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| File Size |
161.20K /
5 Page |
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UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
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| Part No. |
MJE13002
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| OCR Text |
transistor
NPN SILICON POWER transistor
The UTC MJE13002 designed for use in high-volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator's,in... |
| Description |
1.5 A, 300 V, NPN, Si, POWER transistor, TO-126
NPN SILICON POWER transistor
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| File Size |
147.77K /
7 Page |
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??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
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| OCR Text |
...E .
1
NPN EPITAXIAL SILICON transistor
TO-220
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Capability
APPLICATIO... |
| Description |
NPN EPITAXIAL SILICON transistor npn型外延硅晶体
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| File Size |
144.27K /
7 Page |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MJE2361T MJE2360T
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| OCR Text |
...nc. 1995 Motorola Bipolar Power transistor Device Data
NPN Silicon High-Voltage transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 1 Thermal Resistance, Junction to Case Operating ... |
| Description |
0.5 AMPERE POWER transistorS NPN SILICON 350 VOLTS 30 WATTS
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| File Size |
98.47K /
4 Page |
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UTC[Unisonic Technologies]
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| Part No. |
MJE2955T
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| OCR Text |
transistor
HIGH VOLTAGE transistor
DESCRIPTION
The UTC MJE2955T is designed for general purpose of amplifier and switching applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature... |
| Description |
HIGH VOLTAGE transistor
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| File Size |
89.68K /
2 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MJF47
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| OCR Text |
...nc. 1995 Motorola Bipolar Power transistor Device Data Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrica... |
| Description |
NPN SILICON POWER transistor 1 AMPERE 250 VOLTS 28 WATTS
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| File Size |
160.23K /
6 Page |
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MICRO-LINEAR[Micro Linear Corporation]
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| Part No. |
ML4770ES ML4770 ML4770CS
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| OCR Text |
...nput Return for the NMOS output transistor
8
PWR GND
2
ML4770
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings... |
| Description |
2 Cell / Adjustable Output / High Current Boost Regulator with Load Disconnect
2 Cell, Adjustable Output, High Current Boost Regulator with Load Disconnect
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| File Size |
237.14K /
8 Page |
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MICRO-LINEAR[Micro Linear Corporation]
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| Part No. |
ML4771ES ML4771 ML4771CS
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| OCR Text |
... GND Return for the NMOS output transistor
2
ML4771
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functi... |
| Description |
High Current Boost Regulator
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| File Size |
189.30K /
8 Page |
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MICRO-LINEAR[Micro Linear Corporation]
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| Part No. |
ML65F16244CT ML65F16244 ML65F16244CR
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| OCR Text |
...istors Q1 and Q2. The effect of transistor Q1 is to increase the current gain through the stage from input to output, to increase the input resistance and to reduce input capacitance. During an input low-to-high transition, the output trans... |
| Description |
16-Bit Buffer/Line Driver with 3-State Outputs
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| File Size |
202.95K /
10 Page |
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it Online |
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Price and Availability
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