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    CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044

INTERSIL[Intersil Corporation]
Part No. CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044
OCR Text ...input connects the latch states to the Q outputs. A logic "0" or low on the ENABLE input disconnects the latch states from the Q outputs, re...243 200 270 UNITS ns ns ns ns ns ns ns ns PARAMETER Propagation Delay Set or Reset to Q Propagati...
Description Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125
CMOS Quad Clocked “DLatch
R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic
CMOS Quad Clocked “D” Latch
From old datasheet system
CMOS Quad 3 State R/S Latches
CMOS Quad Clocked D Latch
CMOS Quad Clocked “D Latch

File Size 108.99K  /  10 Page

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    CM431BCM233 CM431BCM2R3 CM431BCM89 CM431ACM89 CM431ACM2R3 CM431ACM233 CM431DCS CM431 CM431ACN CM431ACS CM431BCN CM431BCS

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CM431BCM233 CM431BCM2R3 CM431BCM89 CM431ACM89 CM431ACM2R3 CM431ACM233 CM431DCS CM431 CM431ACN CM431ACS CM431BCN CM431BCS CM431DCM233 CM431DCM2R3 CM431DCM89 CM431DCN
OCR Text ...ified thermal stability and pin-to-pin compatible with the earlier 431 series. The output voltage can be adjusted to any value between VREF ...243 0.1% CM431 243 0.1% CM431 RS 0.1% Figure 8.Precision 5V, 1.5A Regulator Figure 9. Precisio...
Description LOW VOLTAGE ADJUSTABLE SHUNT REGULATOR 低电压可调并联稳压器

File Size 221.67K  /  12 Page

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    H21A5 H21A4 H21A6

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. H21A5 H21A4 H21A6
OCR Text ...he packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching...
Description PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

File Size 100.71K  /  4 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ... advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.09...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

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