tmos E-fet power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system tmos power fet 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
tmos E-fet power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos power fet 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
tmos E-fet power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system tmos power fet 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
tmos E-fet power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate tmos power fet 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
tmos power fet 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system tmos V power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos E-fet power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos power fet 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
tmos E-fet power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos power fet 10 AMPERES 1000 VOLTS
tmos E-fet power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate tmos power fet 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM tmos14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 tmos power fet 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, power, MOSfet, TO-264AA From old datasheet system tmos E-fet power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSfet, TO-220AB 100V7A tmos power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A tmos功率场效应管(N沟道增强型硅门)) From old datasheet system tmos power fet 27 AMPERES tmos E-fet power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate