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International Rectifier, Corp.
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Part No. |
IRHN9150
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OCR Text |
... hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-r...rectifiers p-channel rad hard technology hexfets demonstrate e xcellent threshold voltage stability... |
Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
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File Size |
97.11K /
8 Page |
View
it Online |
Download Datasheet |
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International Rectifier, Corp.
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Part No. |
JANSH2N7269U
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OCR Text |
... hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-r...rectifiers rad hard technology hexfets demonstrate excellent threshold voltage stability and break... |
Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
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File Size |
276.10K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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