...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:50-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS4616A4A-5 ADS4616A4A -6 ADS4616A4A -7 Frequenc...
Description
Synchronous DRAM(512K X 16 Bit X 2 Banks) 同步DRAM(为512k × 16位2组)
...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS6608A4A-75 Frequency 133Mhz Interface LVTTL Pa...
...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS6616A4A-5 ADS6616A4A-6 ADS6616A4A-7 ADS6616A4A...
...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:86-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6 Frequenc...
...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4...
Description
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
...edge of the system clock *Burst read single write operation *Auto & Self refresh *4096 refresh cycle *DQM for masking *Package:54-pins 400 mil TSOP-Type II
Ordering Information.
Part No. ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 Frequency...
Description
Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行)
...ost cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
...ost cost-effective and reliable read/ write non-volatile random access memor y. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The A...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
...ost cost-effective and reliable read/write nonvolatile random access memory. The Am28F256 is packaged in 32-pin PDIP PLCC, and TSOP versions. It , is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am2...
Description
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
read/write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single 1.8 volt read, program and erase (1.7 to 1.9 volt) s Multiplexed Data and Address for reduced I/O count -- A0-A15 multiplexed as D0-D15 -- Addresses are latched with...
Description
From old datasheet system 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous read/write, Burst Mode Flash Memory