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  rdson. Datasheet PDF File

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    IPS
Part No. FTP23N10A FTP10N40C FTP11N08A
OCR Text ...production available available rdson (ohm) current (a) voltage (v) type part number free datasheet http:/// confidential empower the world empower the world 4 i i npower npower mosfet mosfet products products (2) (2) now to-220 2.2 4 6...
Description N-Channel Enhancement

File Size 74.30K  /  6 Page

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    PSMN9R0-30YL

NXP Semiconductors
Part No. PSMN9R0-30YL
OCR Text ....4 nC Static characteristics RDSon drain-source on-state resistance 6.07 8.5 m NXP Semiconductors PSMN9R0-30YL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Sy...
Description N-channel TrenchMOS logic level FET

File Size 176.73K  /  13 Page

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    NCE Power
Part No. NCE7190
OCR Text ... - drain cu rrent (a) figure 3 rdson- drain current t j -junction t e mperatu r e( ) figure 4 rdson-junctiontemperature qg gate ch arge (n c) figure 5 gate charge vsd source-drain v o lt ag e (v) figure 6 source- drain ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 478.09K  /  7 Page

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    NCE Power Semiconductor
Part No. NCE55H12
OCR Text ...nsity cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capabil...
Description N-Channel Enhancement Mode Power MOSFET

File Size 394.57K  /  7 Page

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    NCP5810D NCP5810DMUTXG

ON Semiconductor
Part No. NCP5810D NCP5810DMUTXG
OCR Text ...100mA mV VOUTN IPEAKN_MAX P2MOS RDSON P2MOS L EFF POUTN -1 % -2 % -50 1000 1.265 0.632 4.0 800 700 +1 % +2 % 50 20 V mV nA mV mV dB -15 720 900 1.0 0.05 80 -2.0 1020 2.0 0.5 V mA W mA % mW LINE_RP LINE_TP PSRRP LOAD_RP LTRP 60 40 0.5 100 %/...
Description Dual 1 W Output AMOLED Driver Supply

File Size 358.55K  /  14 Page

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    SI9956DY

NXP Semiconductors
Philips Semiconductors
Part No. SI9956DY
OCR Text ...e data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tamb = 25 C; pulsed; tp 10 s Tamb = 25 C; pulsed; tp 10 s VGS = 10 V; ID = 2.2 A VGS = 4.5 V; ID = 1 A Typ - - - - 55 70 Max 20 3.5 2 150 100 200 Unit ...
Description N-channel enhancement mode field-effect transistor

File Size 95.45K  /  13 Page

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